公开(公告)号：US20230076218A1

公开(公告)日：2023-03-09

申请号：US17799019

申请日：2021-02-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Koenraad VAN INGEN SCHENAU ,  Abraham SLACHTER ,  Vadim Yourievich TIMOSHKOV ,  Marleen KOOIMAN ,  Marie-Claire VAN LARE ,  Hermanus Adrianus DILLEN ,  Stefan HUNSCHE ,  Luis Alberto Colina Sant COLINA ,  Aiqin JIANG ,  Fuming WANG ,  Sudharshanan RAGHUNATHAN

IPC: G03F7/20

Abstract: Methods related to improving a simulation processes and solutions (e.g., retargeted patterns) associated with manufacturing of a chip. A method includes obtaining a plurality of dose-focus settings, and a reference distribution based on measured values of a characteristic of a printed pattern associated with each setting of the plurality of dose-focus settings. The method further includes, based on an adjustment model and the plurality of dose-focus settings, determining a probability density function (PDF) of the characteristic such that an error between the PDF and the reference distribution is reduced. The PDF can be a function of the adjustment model and variance associated with dose, the adjustment model being configured to change a proportion of non-linear dose sensitivity contribution to the PDF. A process window can be adjusted based on the determined PDF of the characteristic.

公开(公告)号：US20180129139A1

公开(公告)日：2018-05-10

申请号：US15808874

申请日：2017-11-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Aiqin JIANG ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Hans Van Der Laan ,  Bart Visser ,  Martin Jacobus Johan Jak

IPC: G03F7/20 ,  G05B19/406

CPC classification number: G03F7/70516 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/70683 ,  G05B19/406 ,  G05B2219/45028 ,  H01L22/12 ,  H01L22/20

Abstract: A method including obtaining a fit of data for overlay of a metrology target for a patterning process as a function of a stack difference parameter of the metrology target; and using, by a hardware computer, a slope of the fit (i) to differentiate a metrology target measurement recipe from another metrology target measurement recipe, or (ii) calculate a corrected value of overlay, or (iii) to indicate that an overlay measurement value obtained using the metrology target should be used, or not be used, to configure or modify an aspect of the patterning process, or (iv) any combination selected from (i)-(iii).