公开(公告)号：US20150095858A1

公开(公告)日：2015-04-02

申请号：US14563610

申请日：2014-12-08

Applicant: ASML NETHERLANDS B.V.

Inventor： Jang Fung CHEN ,  Duan-Fu Stephen HSU ,  Douglas VAN DEN BROEKE

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

Abstract: A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process. In embodiments, the invention provides a double exposure lithography method which trims (i.e., removes) unwanted SB residues from the substrate, that is suitable for use, for example, when printing 65 nm or 45 nm node devices or less. According to certain aspects, the present invention provides the ability to utilize large SBs due to the mutual trimming of SBs that results from the process of the present invention. Specifically, in the given process, both the H-mask and the V-mask contain circuit features and SBs, but they are in different corresponding orientations, and therefore, there is a mutual SB trimming for the H-mask and V-mask during the two exposures.

Abstract translation: 基于具有要在多曝光光刻成像处理中使用的基板上成像的特征的目标图案产生互补掩模的方法。 在实施例中，本发明提供了一种双曝光光刻方法，其从衬底修剪（即去除）不期望的SB残余物，其适用于例如当印刷65nm或45nm节点器件或更少时。 根据某些方面，本发明提供了由于本发明的方法产生的SB的相互修剪而利用大型SB的能力。 具体地说，在给定的处理中，H掩模和V掩模都包含电路特征和SB，但是它们处于不同的相应取向，因此在H掩模和V掩模期间存在相互的SB修整 两次曝光。