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公开(公告)号:US09662678B2
公开(公告)日:2017-05-30
申请号:US14222013
申请日:2014-03-21
Applicant: ASML NETHERLANDS B.V.
Inventor: Ivar Schram , Johan Frederik Dijksman , Sander Frederik Wuister , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers
CPC classification number: B05D5/00 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: A method of depositing an imprintable medium onto a target area of a substrate for imprint lithography is disclosed. The method includes moving the substrate, a print head comprising a nozzle to eject an imprintable medium onto the substrate, or both, relative to the other in a first direction across the target area while ejecting a first series of droplets of imprintable medium onto the substrate and moving the substrate, the print head, or both, relative to the other in a second opposing direction across the target area while ejecting a second series of droplets of imprintable medium onto the substrate on or adjacent to droplets from the first series of droplets.
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公开(公告)号:US20150136324A1
公开(公告)日:2015-05-21
申请号:US14605637
申请日:2015-01-26
Applicant: ASML NETHERLANDS B.V.
Inventor: Sander Frederik WUISTER , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
CPC classification number: B29C43/34 , B29C43/021 , B29C43/58 , B29C2043/025 , B29K2101/12 , B44C1/20 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
Abstract translation: 在一个实施例中,提供了压印光刻方法,其包括在衬底的第一区域上提供第一量的可压印介质,当固定时,第一量的可压印介质具有第一蚀刻速率; 以及在所述基板的第二不同区域上提供第二量的可压印介质,所述第二量的可压印介质在固定时具有第二不同的蚀刻速率。
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公开(公告)号:US20140199485A1
公开(公告)日:2014-07-17
申请号:US14222013
申请日:2014-03-21
Applicant: ASML NETHERLANDS B.V.
Inventor: Ivar SCHRAM , Johan Frederik Dijksman , Sander Frederik Wuister , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers
IPC: B05D5/00
CPC classification number: B05D5/00 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: A method of depositing an imprintable medium onto a target area of a substrate for imprint lithography is disclosed. The method includes moving the substrate, a print head comprising a nozzle to eject an imprintable medium onto the substrate, or both, relative to the other in a first direction across the target area while ejecting a first series of droplets of imprintable medium onto the substrate and moving the substrate, the print head; or both, relative to the other in a second opposing direction across the target area while ejecting a second series of droplets of imprintable medium onto the substrate on or adjacent to droplets from the first series of droplets.
Abstract translation: 公开了一种将可压印介质沉积到用于压印光刻的基板的目标区域上的方法。 该方法包括移动基板,包括喷嘴的打印头,以在横过目标区域的第一方向上相对于另一方弹出可压印介质,同时将可压印介质的第一系列液滴喷射到基板上 并移动基板,打印头; 或两者相对于另一个在相对于目标区域的第二相对方向上,同时在第一系列液滴上或邻近液滴上喷射可压印介质的第二系列液滴到基板上。
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公开(公告)号:US09278466B2
公开(公告)日:2016-03-08
申请号:US14605637
申请日:2015-01-26
Applicant: ASML NETHERLANDS B.V.
Inventor: Sander Frederik Wuister , Vadim Yevgenyevich Banine , Johan Frederik Dijksman , Yvonne Wendela Kruijt-Stegeman , Jeroen Herman Lammers , Roelof Koole
IPC: C03C15/00 , B29C43/34 , B44C1/20 , B82Y10/00 , B82Y40/00 , G03F7/00 , B29C43/02 , B29C43/58 , B29K101/12
CPC classification number: B29C43/34 , B29C43/021 , B29C43/58 , B29C2043/025 , B29K2101/12 , B44C1/20 , B82Y10/00 , B82Y40/00 , G03F7/0002
Abstract: In an embodiment, there is provided an imprint lithography method that includes providing a first amount of imprintable medium on a first area of a substrate, the first amount of imprintable medium, when fixed, having a first etch rate; and providing a second amount of imprintable medium on a second, different area of the substrate, the second amount of imprintable medium, when fixed, having a second, different etch rate.
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