公开(公告)号：US20240319581A1

公开(公告)日：2024-09-26

申请号：US18579176

申请日：2022-07-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Jialei TANG ,  Dezheng SUN

IPC: G03F1/36 ,  G03F7/00

CPC classification number: G03F1/36 ,  G03F7/70508 ,  G03F7/706 ,  G03F7/70683 ,  G03F7/706831 ,  G03F7/706837

Abstract: Generating a design (e.g., a metrology mark or a device pattern to be printed on a substrate) that is optimized for aberration sensitivity related to an optical system of a lithography system. A metrology mark (e.g., a transmission image sensor (TIS) mark) is optimized for a given device pattern by matching the aberration sensitivity of the metrology mark with the aberration sensitivity of the device pattern. A cost function that includes the aberration sensitivity difference between the metrology mark and the device pattern is evaluated based on an imaging characteristic response (e.g., a critical dimension (CD) response to focus) obtained from a simulation model that simulates lithography. The cost function is evaluated by modifying the metrology mark until the cost function is minimized and an optimized metrology mark is output when the cost function is minimized.