Abstract:
A A method of calibrating a substrate positioning system of a lithographic apparatus, the method including: exposing a pattern with the lithographic apparatus on an exposed layer on the surface of a substrate having a reference layer, wherein the pattern corresponds to a movement of the substrate by the substrate positioning system; measuring overlay data between the exposed layer and the reference layer on a plurality of positions on the substrate; transforming the overlay data from a spatial domain to a frequency domain by a discrete cosine transformation; modifying the overlay data in the frequency domain by selecting a subset of the overlay data; transforming the modified overlay data from the frequency domain back to the spatial domain by an inverse discrete cosine transformation; calibrating the substrate positioning system by using the modified overlay data in the spatial domain.
Abstract:
A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.
Abstract:
A method produces at least one monitor wafer for a lithographic apparatus. The monitor wafer is for use in combination with a scanning control module to periodically retrieve measurements defining a baseline from the monitor wafer thereby determining parameter drift from the baseline. In doing this, allowance and/or correction can be to be made for the drift. The baseline is determined by initially exposing the monitor wafer(s) using the lithographic apparatus, such that the initial exposure is performed while using non-standard alignment model settings optimized for accuracy, such as those used for testing the apparatus. An associated lithographic apparatus is also disclosed.
Abstract:
A lithographic apparatus operates by moving a substrate and a patterning device relative to each other in a sequence of movements such that a pattern is applied at a successive portions on the substrate. Each portion of the substrate is patterned by a scanning operation in which the patterning device is scanned through the radiation beam while synchronously scanning the substrate through the patterned radiation beam so as to apply the pattern to the desired portion on the substrate. An intrafield correction is applied during each scanning operation so as to compensate for distortion effects which vary during the scanning operation. The intrafield correction includes corrective variations of one or more properties of the projection system, and optionally out-of-plane movements of the patterning device and/or substrate table.