公开(公告)号：US20180216930A1

公开(公告)日：2018-08-02

申请号：US15873880

申请日：2018-01-17

Applicant: ASML NETHERLANDS B.V.

Inventor： SAMEE UR-REHMAN

IPC: G01B11/24 ,  G03F7/20 ,  G01B11/30 ,  G01N21/956

Abstract: A metrology method, and associated metrology apparatus, that includes measuring a target formed in at least two layers on a substrate by a lithographic process and capturing at least one corresponding pair of non-zeroth diffraction orders, for example in an image field, to obtain measurement data. A simulation of a measurement of the target as defined in terms of geometric parameters of the target, the geometric parameters including one or more variable geometric parameters is performed and a difference between the measurement data and simulation data is minimized, so as to directly reconstruct values for the one or more variable geometric parameters.

公开(公告)号：US20180299794A1

公开(公告)日：2018-10-18

申请号：US15942423

申请日：2018-03-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh PANDEY ,  Jin LIAN ,  SAMEE UR-REHMAN ,  Martin Jacobus Johan JAK

IPC: G03F7/20 ,  G01B11/02

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G03F7/70566 ,  G03F7/70575 ,  G03F7/70583 ,  G03F7/70616

Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.