公开(公告)号：WO2020043583A1

公开(公告)日：2020-03-05

申请号：PCT/EP2019/072434

申请日：2019-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： JEN, Chih-Yu ,  MA, Long ,  WANG, Yongjun ,  JIANG, Jun

IPC: H01J37/22 ,  G01N23/2251 ,  H01J37/28 ,  H01L21/66

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus for detecting a thin device structure defect is disclosed. The beam inspection apparatus includes a charged particle beam source to direct charged particles to a location of a wafer under inspection over a time sequence, and a controller configured to sample multiple images (510-538) of the area of the wafer at difference times over the time sequence. The multiple images are compared to detect a voltage contrast difference or changes (560-564) to identify a thin device structure defect (562).