公开(公告)号：US20210208510A1

公开(公告)日：2021-07-08

申请号：US16463430

申请日：2017-11-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Yen-Wen LU ,  Xiaorui CHEN ,  Yang LIN

IPC: G03F7/20 ,  G05B19/418

Abstract: A method of controlling a computer process for designing or verifying a photolithographic component includes building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.

公开(公告)号：US20240241436A1

公开(公告)日：2024-07-18

申请号：US18289384

申请日：2022-05-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Xingyue PENG ,  Rafael C. HOWELL ,  Yen Wen LU ,  Xiaorui CHEN

IPC: G03F1/84 ,  G03F1/36 ,  G06F30/20

CPC classification number: G03F1/84 ,  G06F30/20 ,  G03F1/36

Abstract: Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.

公开(公告)号：US20220283511A1

公开(公告)日：2022-09-08

申请号：US17751110

申请日：2022-05-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Yen-Wen LU ,  Xiaorui CHEN ,  Yang LIN

IPC: G03F7/20 ,  G05B19/418

Abstract: A method of controlling a computer process for designing or verifying a photolithographic component, the method including building a source tree including nodes of the process, including dependency relationships among the nodes, defining, for some nodes, at least two different process conditions, expanding the source tree to form an expanded tree, including generating a separate node for each different defined process condition, and duplicating dependent nodes having an input relationship to each generated separate node, determining respective computing hardware requirements for processing the node, selecting computer hardware constraints based on capabilities of the host computing system, determining, based on the requirements and constraints and on dependency relations in the expanded tree, an execution sequence for the computer process, and performing the computer process on the computing system.