METHOD AND APPARATUS FOR PATTERN CORRECTION AND VERIFICATION
    1.
    发明申请
    METHOD AND APPARATUS FOR PATTERN CORRECTION AND VERIFICATION 审中-公开
    用于模式校正和验证的方法和装置

    公开(公告)号:WO2017060192A1

    公开(公告)日:2017-04-13

    申请号:PCT/EP2016/073554

    申请日:2016-10-03

    CPC classification number: G03F1/36 G03F7/70441 G03F7/705 G03F7/70625

    Abstract: A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.

    Abstract translation: 一种方法,包括提供出现在一个或多个图形化工艺衬底的一个或多个图像中的多个量规图案的多个单位单元,每个单位单元表示多个量规图案的量规图案的实例,使图像信息平均化 以达到量规图形的合成表示,并且基于合成表示确定量规图案的几何尺寸。

    INSTANT TUNING METHOD FOR ACCELERATING RESIST AND ETCH MODEL CALIBRATION

    公开(公告)号:WO2019179782A1

    公开(公告)日:2019-09-26

    申请号:PCT/EP2019/055691

    申请日:2019-03-07

    Abstract: The present disclosure pertains to a method for accelerating calibration of a fabrication process model, the method comprising performing one or more iterations of: defining one or more fabrication process model terms; receiving predetermined information related to the one or more fabrication process model terms; generating a fabrication process model based on the predetermined information, the fabrication process model configured to generate one or more predictions related to a metrology gauge; determining whether a prediction related to a dimension of a gauge is within a predetermined threshold of the gauge as measured on a post-fabrication process wafer; and responsive to the prediction not breaching the predetermined threshold, optimizing the one or more fabrication process terms such that the prediction related to the dimension of the gauge is within the predetermined threshold of the gauge as measured on the post-fabrication process wafer.

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