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    Method for determining curvilinear patterns for patterning device
    3.
    发明授权
    Method for determining curvilinear patterns for patterning device 有权

    公开(公告)号：US11232249B2

    公开(公告)日：2022-01-25

    申请号：US16976492

    申请日：2019-02-28

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

    IPC: G06F30/30 ,  G03F1/30 ,  G03F7/20 ,  G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G06F119/18

    Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

    Process window identifier
    4.
    发明授权
    Process window identifier 有权

    公开(公告)号：US09842186B2

    公开(公告)日：2017-12-12

    申请号：US14861847

    申请日：2015-09-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Frank Gang Chen ,  Joseph Werner De Vocht ,  Yuelin Du ,  Wanyu Li ,  Yen-Wen Lu

    IPC: G06F17/50 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70666

    Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method comprising: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

    Multivariable solver for optical proximity correction
    5.
    发明授权
    Multivariable solver for optical proximity correction 有权
    用于光学邻近校正的多变量求解器

    公开(公告)号：US08938699B2

    公开(公告)日：2015-01-20

    申请号：US13896659

    申请日：2013-05-17

    Applicant: ASML Netherlands B.V.

    Inventor： William S. Wong ,  Been-Der Chen ,  Yen-Wen Lu ,  Jiangwei Li ,  Tatsuo Nishibe

    IPC: G06F17/50 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20

    CPC classification number: G03F1/144 ,  G03F1/36 ,  G03F7/70441 ,  G03F7/705

    Abstract: The method of the invention tracks how the collective movement of edge segments in a mask layout alters the resist image values at control points in the layout and simultaneously determines a correction amount for each edge segment in the layout. A multisolver matrix that represents the collective effect of movements of each edge segment in the mask layout is used to simultaneously determine the correction amount for each edge segment in the mask layout.

    Abstract translation: 本发明的方法跟踪掩模布局中边缘段的集体移动如何在布局中的控制点处改变抗蚀剂图像值，同时确定布局中每个边缘段的校正量。 用于表示掩模布局中每个边缘段的移动的集合效果的多分离器矩阵用于同时确定掩模布局中每个边缘段的校正量。

    Method and Apparatus for Model Based Flexible MRC
    7.
    发明申请
    Method and Apparatus for Model Based Flexible MRC 有权
    基于模型的柔性MRC的方法和装置

    公开(公告)号：US20130111421A1

    公开(公告)日：2013-05-02

    申请号：US13656635

    申请日：2012-10-19

    Applicant: ASML Netherlands B.V.

    Inventor： Taihui Liu ,  Been-Der Chen ,  Yen-Wen Lu

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/70 ,  G06F17/50

    Abstract: Described herein is a method of processing a pattern layout for a lithographic process, the method comprising: identifying a feature from a plurality of features of the layout, the feature violating a pattern layout requirement; and reconfiguring the feature, wherein the reconfigured feature still violates the pattern layout requirement, the reconfiguring including evaluating a cost function that measures a lithographic metric affected by a change to the feature and a parameter characteristic of relaxation of the pattern layout requirement.

    Abstract translation: 这里描述了一种处理光刻处理的图案布局的方法，该方法包括：从布局的多个特征中识别特征，所述特征违反图案布局要求; 并且重新配置所述特征，其中所述重新配置的特征仍然违反所述图案布局要求，所述重新配置包括评估测量受所述特征的改变影响的光刻度量的成本函数以及所述图案布局要求的松弛的参数特征。

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