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公开(公告)号：US12189313B2
公开(公告)日：2025-01-07
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US20220179328A1
公开(公告)日：2022-06-09
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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3.发明公开公开(公告)号：US20240103387A1
公开(公告)日：2024-03-28
申请号：US18528933
申请日：2023-12-05
Applicant: ASML Netherlands B.V.
Inventor： Yue Ma , Dzmitry Labetski , Andrew David LaForge
CPC classification number: G03F7/70858 , G03F7/70033 , H05G2/008
Abstract: Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.
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公开(公告)号：US10349509B2
公开(公告)日：2019-07-09
申请号：US16057101
申请日：2018-08-07
Applicant: ASML Netherlands B.V.
Inventor： Robert Jay Rafac , John Tom Stewart , Andrew David LaForge
IPC: H05G2/00
Abstract: A first target is provided to an interior of a vacuum chamber, a first light beam is directed toward the first target to form a first plasma from target material of the first target, the first plasma being associated with a directional flux of particles and radiation emitted from the first target along a first emission direction, the first emission direction being determined by a position of the first target; a second target is provided to the interior of the vacuum chamber; and a second light beam is directed toward the second target to form a second plasma from target material of the second target, the second plasma being associated with a directional flux of particles and radiation emitted from the second target along a second emission direction, the second emission direction being determined by a position of the second target, the first and second emission directions being different.
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公开(公告)号：US20210063899A1
公开(公告)日：2021-03-04
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue MA
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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Patent Agency Ranking
公开(公告)号：US10904993B2
公开(公告)日：2021-01-26
申请号：US16418652
申请日：2019-05-21
Applicant: ASML Netherlands B.V.
Inventor： Robert Jay Rafac , John Tom Stewart , Andrew David LaForge
IPC: H05G2/00
Abstract: A first target is provided to an interior of a vacuum chamber, a first light beam is directed toward the first target to form a first plasma from target material of the first target, the first plasma being associated with a directional flux of particles and radiation emitted from the first target along a first emission direction, the first emission direction being determined by a position of the first target; a second target is provided to the interior of the vacuum chamber; and a second light beam is directed toward the second target to form a second plasma from target material of the second target, the second plasma being associated with a directional flux of particles and radiation emitted from the second target along a second emission direction, the second emission direction being determined by a position of the second target, the first and second emission directions being different.
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公开(公告)号：US20170311429A1
公开(公告)日：2017-10-26
申请号：US15137933
申请日：2016-04-25
Applicant: ASML Netherlands B.V.
Inventor： Robert Jay Rafac , John Tom Stewart , Andrew David LaForge
IPC: H05G2/00
Abstract: A first target is provided to an interior of a vacuum chamber, a first light beam is directed toward the first target to form a first plasma from target material of the first target, the first plasma being associated with a directional flux of particles and radiation emitted from the first target along a first emission direction, the first emission direction being determined by a position of the first target; a second target is provided to the interior of the vacuum chamber; and a second light beam is directed toward the second target to form a second plasma from target material of the second target, the second plasma being associated with a directional flux of particles and radiation emitted from the second target along a second emission direction, the second emission direction being determined by a position of the second target, the first and second emission directions being different.
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8.发明授权公开(公告)号：US11874608B2
公开(公告)日：2024-01-16
申请号：US17283722
申请日：2019-10-21
Applicant: ASML Netherlands B.V.
Inventor： Yue Ma , Dzmitry Labetski , Andrew David LaForge
CPC classification number: G03F7/70858 , G03F7/70033 , H05G2/008
Abstract: Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.
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公开(公告)号：US11347154B2
公开(公告)日：2022-05-31
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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10.发明申请公开(公告)号：US20210325791A1
公开(公告)日：2021-10-21
申请号：US17283722
申请日：2019-10-21
Applicant: ASML Netherlands B.V.
Inventor： Yue Ma , Dzmitry Labetski , Andrew David LaForge
Abstract: Disclosed is a source for and method of generating extreme ultraviolet radiation in which spitting of molten target material is hindered through depletion of the number of hydrogen radicals available to enter deposits of molten target material and create hydrogen bubbles therein by introducing an active gas that reacts with the hydrogen radicals.
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