公开(公告)号：US20240310742A1

公开(公告)日：2024-09-19

申请号：US18260878

申请日：2021-12-15

Applicant: ASML Netherlands B.V.

Inventor： Vladimir KVON ,  Andrei Mikhailovich YAKUNIN ,  Marcus Adrianus VAN DE KERKHOF ,  Dmitry Igorevich ASTAKHOV

IPC: G03F7/00

CPC classification number: G03F7/70916 ,  G03F7/70716 ,  G03F7/70033

Abstract: A contamination reduction system for reducing contamination of a patterning system in a plasma environment, comprising: a support arranged to hold a patterning system in a radiation beam; a shutter configured to shield a portion of the radiation beam from the patterning system; and an electrode positioned between the shutter and the support, the electrode connected to a voltage source and configured to generate an electric field between the electrode and the patterning system held by the support.