公开(公告)号：US20230176494A1

公开(公告)日：2023-06-08

申请号：US17922922

申请日：2021-04-22

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： Zahrasadat DASTOURI ,  Igor Matheus Petronella AARTS ,  Simon Gijsbert Josephus MATHIJISSEN ,  Peter David ENGBLOM

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F9/7088 ,  G03F9/7092 ,  G03F9/7049 ,  G03F7/70633

Abstract: A method for generating an alignment signal that includes detecting local dimensional distortions of an alignment mark and generating the alignment signal based on the alignment mark. The alignment signal is weighted based on the local dimensional distortions of the alignment mark. Detecting the local dimensional distortions can include irradiating the alignment mark with radiation, the alignment mark including a geometric feature, and detecting one or more phase and/or amplitude shifts in reflected radiation from the geometric feature. The one or more phase and/or amplitude shifts correspond to the local dimensional distortions of the geometric feature. A parameter of the radiation, an alignment inspection location within the geometric feature, an alignment inspection location on a layer of a structure, and/or a radiation beam trajectory across the geometric feature may be determined based on the one or more detected phase and/or amplitude shifts.

公开(公告)号：US20240168397A1

公开(公告)日：2024-05-23

申请号：US18552623

申请日：2022-03-21

Applicant: ASML Netherlands B.V.

Inventor： Joshua ADAMS ,  Leonardo Gabriel MONTILLA ,  Nick Franciscus Wilhelmus THISSEN ,  Leendert Jan KARSSEMEIJER ,  Igor Matheus Petronella AARTS ,  Zahrasadat DASTOURI

IPC: G03F9/00 ,  G01B9/02055 ,  G01B11/16 ,  G01B11/27 ,  G03F7/00

CPC classification number: G03F9/7049 ,  G01B9/02062 ,  G01B11/161 ,  G01B11/272 ,  G03F7/70616 ,  G03F7/706841 ,  G03F9/7065 ,  G03F9/7088 ,  G03F9/7092

Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to ensure accurate exposure of one or more patterns on the substrate. An example method can include receiving measurement data indicative of an interference between light diffracted from a plurality of alignment marks disposed on a substrate or reflected from the substrate. The example method can further include determining substrate deformation data based on the measurement data. The example method can further include determining alignment mark deformation data based on the measurement data. The alignment mark deformation data can include alignment mark deformation spectral pattern data, alignment mark deformation amplitude data, and alignment mark deformation offset data. Subsequently, the example method can include determining a correction to the measurement data based on the substrate deformation data and the alignment mark deformation data.