公开(公告)号：US20220361336A1

公开(公告)日：2022-11-10

申请号：US17314131

申请日：2021-05-07

Applicant: Aplus Semiconductor Technologies Co., Ltd.

Inventor： Cheng-Neng Chen ,  Sui-Ho Tsai ,  Yun-Nan Wang ,  Chiao-Hui Wang

IPC: H05K1/14 ,  C23C14/34 ,  C23C18/16 ,  C25D5/02 ,  C25D5/10 ,  G03F7/004 ,  G03F7/20 ,  C23C28/02 ,  C23C14/58

Abstract: A metal circuit structure based on a flexible printed circuit (FPC) contains: a substrate, a first metal layer attached on the substrate, a second metal layer formed on the first metal layer, and an intermediate layer defined between the first metal layer and the second metal layer. A first surface of the intermediate layer is connected with the first metal layer, and a second surface of the intermediate layer is connected with the second metal layer. The intermediate layer is made of a first material, the second metal layer is made of a second material, and the first material of the intermediate layer does not act with the second material of the second metal layer.

公开(公告)号：US12089331B2

公开(公告)日：2024-09-10

申请号：US17314131

申请日：2021-05-07

Applicant: Aplus Semiconductor Technologies Co., Ltd.

Inventor： Cheng-Neng Chen ,  Sui-Ho Tsai ,  Yun-Nan Wang ,  Chiao-Hui Wang

IPC: H05K1/14 ,  C23C14/34 ,  C23C14/58 ,  C23C18/16 ,  C23C28/02 ,  C25D5/02 ,  C25D5/10 ,  G03F7/004 ,  G03F7/20 ,  H05K1/11

CPC classification number: H05K1/147 ,  C23C14/34 ,  C23C14/5873 ,  C23C18/1637 ,  C23C28/023 ,  C25D5/022 ,  C25D5/10 ,  G03F7/0041 ,  G03F7/2016 ,  H05K1/11 ,  H05K2201/032 ,  H05K2201/0338 ,  H05K2201/0341

Abstract: A metal circuit structure based on a flexible printed circuit (FPC) contains: a substrate, a first metal layer attached on the substrate, a second metal layer formed on the first metal layer, and an intermediate layer defined between the first metal layer and the second metal layer. A first surface of the intermediate layer is connected with the first metal layer, and a second surface of the intermediate layer is connected with the second metal layer. The intermediate layer is made of a first material, the second metal layer is made of a second material, and the first material of the intermediate layer does not act with the second material of the second metal layer.