Low complexity crosstalk mitigation in a nonvolatile memory

    公开(公告)号:US20250130725A1

    公开(公告)日:2025-04-24

    申请号:US18422007

    申请日:2024-01-25

    Applicant: Apple Inc.

    Abstract: A storage system includes circuitry and multiple memory cells. The memory cells are arranged in multiple Word Lines (WLs), including a target WL. The circuitry includes combinational logic implemented in hardware, the circuitry configured to: read a page from a group of target memory cells in the target WL multiple times to produce multiple respective target binary readouts, read a group of neighbor memory cells in a WL neighboring to the target WL so as to produce a single neighbor binary readout, apply the combinational logic to both the target binary readouts and the neighbor binary readout to produce (i) output bits of the page, and (ii) respective binary confidence levels associated with the output bits, and transmit the output bits and the binary confidence levels to a controller.

    READ CACHE MANAGEMENT IN MULTI-LEVEL CELL (MLC) NON-VOLATILE MEMORY
    6.
    发明申请
    READ CACHE MANAGEMENT IN MULTI-LEVEL CELL (MLC) NON-VOLATILE MEMORY 有权
    读取多级存储器(MLC)非易失性存储器中的缓存管理

    公开(公告)号:US20160092372A1

    公开(公告)日:2016-03-31

    申请号:US14499286

    申请日:2014-09-29

    Applicant: APPLE INC.

    Abstract: A method includes reading memory pages from a non-volatile memory that holds at least first memory pages having a first bit significance and second memory pages having a second bit significance, different from the first bit significance. At least some of the read memory pages are cached in a cache memory. One or more of the cached memory pages are selected for eviction from the cache memory, in accordance with a selection criterion that gives eviction preference to the memory pages of the second bit significance over the memory pages of the first bit significance. The selected memory pages are evicted from the cache memory.

    Abstract translation: 一种方法包括从非易失性存储器读取存储器页面,该存储器页面至少保存具有第一位重要性的第一存储器页面和不同于第一位重要性的具有第二位重要性的第二存储器页面。 至少一些读取的存储器页面被缓存在高速缓冲存储器中。 根据对第一位有效位的存储器页上的第二位有效位的存储器页进行逐出偏好的选择标准,选择一个或多个高速缓冲存储器页面用于从高速缓冲存储器进行驱逐。 所选存储器页被从缓存存储器中逐出。

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