公开(公告)号：US20240106192A1

公开(公告)日：2024-03-28

申请号：US17951410

申请日：2022-09-23

Applicant: Apple Inc.

Inventor： Fei Tan ,  Keith Lyon ,  Tong Chen ,  Chin Han Lin ,  Xiaofeng Fan ,  Arnaud Laflaquiere

IPC: H01S5/026 ,  G01S7/481 ,  G02B7/28 ,  G03B13/20 ,  G03B13/36 ,  H01L31/12 ,  H01S5/042 ,  H01S5/42

CPC classification number: H01S5/0262 ,  G01S7/4812 ,  G02B7/287 ,  G03B13/20 ,  G03B13/36 ,  H01L31/125 ,  H01S5/042 ,  H01S5/423

Abstract: Disclosed herein are electronic devices that include arrays of dual function light transmit and receive pixels. The pixels of such arrays include a photodetector (PD) structure and a vertical-cavity, surface-emitting laser (VCSEL) diode, both formed in a common stack of epitaxial semiconductor layers. The pixels of the array may be configured by a controller or processor to function either as a light emitter by biasing the VCSEL diode, or as a light detector or receiver by a different bias applied to the PD structure, and this functionality may be altered in time. The array of dual function pixels may be positioned interior to an optical display of an electronic device, in some cases to provide depth sensing or autofocus. The array of pixels may be registered with a camera of an electronic device, such as to provide depth sensing or autofocus.

公开(公告)号：US20210003385A1

公开(公告)日：2021-01-07

申请号：US16913645

申请日：2020-06-26

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02 ,  H01S5/026 ,  H01S5/30 ,  H01S5/183 ,  H01S5/343

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US20250112189A1

公开(公告)日：2025-04-03

申请号：US18673101

申请日：2024-05-23

Applicant: Apple Inc.

Inventor： Nicolas Hotellier ,  Christophe Verove ,  Amaud Laflaquiere ,  David Coulon ,  Siddharth Joshi ,  Stephane Zoll ,  Keith Lyon ,  Cristiano L. Niclass

IPC: H01L23/00 ,  H01L27/146 ,  H01S5/183

Abstract: An electronic device includes a set of semiconductor layers defining a set of semiconductor mesas. A first dielectric abuts the set of semiconductor layers at a perimeter of the set of semiconductor layers. A second dielectric is disposed on the set of semiconductor mesas. A set of conductors is routed in or on the second dielectric. The set of conductors is electrically connected to at least one active device defined in at least one semiconductor mesa of the set of semiconductor mesas. The set of conductors is configured to route electrical signals to or from the at least one semiconductor mesa, and the set of conductors includes a set of hybrid bonding pads on the second dielectric.

公开(公告)号：US20210351561A1

公开(公告)日：2021-11-11

申请号：US17233489

申请日：2021-04-18

Applicant: Apple Inc.

Inventor： Keith Lyon

IPC: H01S5/0225 ,  H01S5/343 ,  H01S5/183 ,  H01S5/42

Abstract: An optoelectronic device includes a semiconductor substrate having first and second faces. An emitter is disposed on the first face of the semiconductor substrate and is configured to emit a beam of radiation through the substrate. At least one curved optical surface is formed in the second face of the semiconductor substrate. A first reflector is disposed on the first face in proximity to the emitter, and a second reflector is disposed on the second face in proximity to the curved optical surface, such that the second reflector reflects the beam that was emitted through the semiconductor substrate by the emitter to reflect back through the semiconductor substrate toward the first reflector, which then reflects the beam to pass through the semiconductor substrate so as to exit from the semiconductor substrate through the curved optical surface.

公开(公告)号：US20230152081A1

公开(公告)日：2023-05-18

申请号：US18094255

申请日：2023-01-06

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B9/02 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

CPC classification number: G01B9/02097 ,  H01S5/0262 ,  H01S5/3432 ,  H01S5/18313 ,  H01S5/3095 ,  G01B9/02092 ,  G01B11/026 ,  H01S5/183 ,  G01S17/34 ,  G01S7/4916

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US11549799B2

公开(公告)日：2023-01-10

申请号：US16913645

申请日：2020-06-26

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chin Han Lin ,  Keith Lyon ,  Marc A. Drader ,  Weiping Li

IPC: G01B9/02 ,  G01B9/02097 ,  H01S5/026 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  G01B11/02 ,  G01S17/34 ,  G01S7/4912

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

公开(公告)号：US11469573B2

公开(公告)日：2022-10-11

申请号：US16779609

申请日：2020-02-02

Applicant: Apple Inc.

Inventor： Keith Lyon ,  Arnaud Laflaquiere

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/02 ,  H01S5/30 ,  H01S5/42 ,  H01S5/02255 ,  H01S5/026 ,  G02B27/42 ,  H01S5/02253 ,  H01S5/02326

Abstract: An optoelectronic device includes a semiconductor substrate having first and second faces. A first array of emitters are formed on the first face of the semiconductor substrate and are configured to emit respective beams of radiation through the substrate. Electrical connections are coupled to actuate selectively first and second sets of the emitters in the first array. A second array of microlenses are formed on the second face of the semiconductor substrate in respective alignment with the emitters in at least one of the first and second sets and are configured to focus the beams emitted from the emitters in the at least one of the first and second sets so that the beams are transmitted from the second face with different, respective first and second focal properties.

公开(公告)号：US12218478B2

公开(公告)日：2025-02-04

申请号：US17233489

申请日：2021-04-18

Applicant: Apple Inc.

Inventor： Keith Lyon

IPC: H01S5/183 ,  H01S5/0225 ,  H01S5/343 ,  H01S5/42

Abstract: An optoelectronic device includes a semiconductor substrate having first and second faces. An emitter is disposed on the first face of the semiconductor substrate and is configured to emit a beam of radiation through the substrate. At least one curved optical surface is formed in the second face of the semiconductor substrate. A first reflector is disposed on the first face in proximity to the emitter, and a second reflector is disposed on the second face in proximity to the curved optical surface, such that the second reflector reflects the beam that was emitted through the semiconductor substrate by the emitter to reflect back through the semiconductor substrate toward the first reflector, which then reflects the beam to pass through the semiconductor substrate so as to exit from the semiconductor substrate through the curved optical surface.

公开(公告)号：US20240089569A1

公开(公告)日：2024-03-14

申请号：US18302822

申请日：2023-04-19

Applicant: Apple Inc.

Inventor： Roei Remez ,  Brian McCall ,  Milan Maksimovic ,  Maoz Ovadia ,  Arnaud Laflaquière ,  Gershon Rosenblum ,  Noah D. Bedard ,  Omer Korech ,  Emanuel Mordechai ,  Keith Lyon ,  Refael Della Pergola ,  Niv Gilboa

IPC: H04N23/13 ,  G02B1/00 ,  G02B1/04 ,  G02B26/08 ,  G02B27/00 ,  G02B27/40

CPC classification number: H04N23/13 ,  G02B1/002 ,  G02B1/041 ,  G02B26/0808 ,  G02B27/0012 ,  G02B27/40

Abstract: An image sensing device includes a detector assembly, which includes a matrix of optical sensing elements having a predefined pitch. Each optical sensing element includes an active area having a width that is less than 90% of the pitch. An array of optical apertures are respectively aligned with the optical sensing elements such that each optical aperture is positioned at a distance from a respective optical sensing element that is no less than twice the width of the active area. Objective optics are configured to focus light from a scene onto the detector assembly.

公开(公告)号：US11418006B1

公开(公告)日：2022-08-16

申请号：US16538860

申请日：2019-08-13

Applicant: Apple Inc.

Inventor： Arnaud Laflaquière ,  Fei Tan ,  Keith Lyon

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/42 ,  H01S5/183 ,  H01S5/02 ,  H01S5/343 ,  H01S5/042 ,  G01S7/481 ,  G01S17/10

Abstract: An optoelectronic device includes a semiconductor substrate and an optically-active structure, including epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack, a quantum well structure with P- and N-doped layers disposed respectively on opposing sides of the quantum well structure, and an upper DBR stack. Electrodes are coupled to apply a bias voltage between the P- and N-doped layers. Control circuitry, disposed on the substrate, is configured to apply a forward bias voltage between the electrodes so as to cause the optically-active structure to emit an optical pulse through the upper DBR stack, and then to reverse the bias voltage between the electrodes so as to cause the optically-active structure to output an electrical pulse to the control circuitry in response to incidence of one or more of the photons, due to reflection of the optical pulse, on the quantum well structure through the upper DBR stack.