公开(公告)号：WO2021188217A

公开(公告)日：2021-09-23

申请号：PCT/US2021/016222

申请日：2021-02-02

Applicant: APPLE INC. [US]/[US]

Inventor： RIEUTORT-LOUIS, Warren, S. ,  HO, Meng-Huan ,  JAMSHIDI ROUDBARI, Abbas ,  YANG, Chih, Jen ,  HSU, Chin, Wei ,  CHOI, Jae, Won ,  GUILLOU, Jean-Pierre, S. ,  XU, Ming ,  LIU, Rui ,  QIAO, Yi ,  LIU, Yu-Wen ,  CHE, Yuchi ,  CUI, Yue

IPC: H04M1/02 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52

Abstract: An electronic device may include a display and an optical sensor formed underneath the display. A pixel removal region on the display may at least partially overlap with the sensor. The pixel removal region may include a plurality of non-pixel regions each of which is devoid of thin-film transistors. The plurality of non-pixel regions is configured to increase the transmittance of light through the display to the sensor. In addition to removing thin-film transistors in the pixel removal region, additional layers in the display stack-up may be removed. In particular, a cathode layer, polyimide layer, and/or substrate in the display stack-up may be patterned to have an opening in the pixel removal region. A polarizer may be bleached in the pixel removal region for additional transmittance gains. The cathode layer may be removed using laser ablation with a spot laser or blanket illumination.

公开(公告)号：WO2022125249A1

公开(公告)日：2022-06-16

申请号：PCT/US2021/058808

申请日：2021-11-10

Applicant: APPLE INC. [US]/[US]

Inventor： HUANG, Jung, Yen ,  ONO, Shinya ,  LIN, Chin-Wei ,  MATSUDAIRA, Akira ,  HU, Cheng, Min ,  CHANG, Chih, Pang ,  CHUANG, Ching-Sang ,  CHOO, Gihoon ,  CHANG, Jiun-Jye ,  YEH, Po-Chun ,  CHANG, Shih, Chang ,  LIU, Yu-Wen ,  LEE, Zino

IPC: H01L27/12 ,  H01L29/786

Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

公开(公告)号：EP4256612A1

公开(公告)日：2023-10-11

申请号：EP21823699.0

申请日：2021-11-10

Applicant: Apple Inc.

Inventor： HUANG, Jung, Yen ,  ONO, Shinya ,  LIN, Chin-Wei ,  MATSUDAIRA, Akira ,  HU, Cheng, Min ,  CHANG, Chih, Pang ,  CHUANG, Ching-Sang ,  CHOO, Gihoon ,  CHANG, Jiun-Jye ,  YEH, Po-Chun ,  CHANG, Shih, Chang ,  LIU, Yu-Wen ,  LEE, Zino

IPC: H01L27/12 ,  H01L29/786