公开(公告)号：EP3357096A1

公开(公告)日：2018-08-08

申请号：EP16820506.0

申请日：2016-12-14

Applicant: Apple Inc.

Inventor： BOUR, David P. ,  HAEGER, Daniel A. ,  SIZOV, Dimitry S. ,  XIN, Xiaobin

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/14

CPC classification number: H01L33/02 ,  H01L33/0095 ,  H01L33/14 ,  H01L33/145

Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.