公开(公告)号：US10482952B2

公开(公告)日：2019-11-19

申请号：US15861308

申请日：2018-01-03

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C7/00 ,  G11C11/419 ,  G11C5/14 ,  H03K19/0185 ,  G11C8/08 ,  G11C11/417 ,  H03K3/356 ,  G11C7/12

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

公开(公告)号：US09672901B2

公开(公告)日：2017-06-06

申请号：US15133400

申请日：2016-04-20

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C7/00 ,  G11C11/419 ,  G11C5/14 ,  G11C8/08 ,  G11C11/417 ,  G11C7/12 ,  H03K3/356 ,  H03K19/0185

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

公开(公告)号：US09129708B2

公开(公告)日：2015-09-08

申请号：US14467633

申请日：2014-08-25

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C7/00 ,  G11C11/419 ,  G11C5/14 ,  G11C8/08 ,  G11C11/417 ,  G11C7/12

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

Abstract translation: 在一个实施例中，集成电路包括由第一电源电压提供的至少一个逻辑电路和耦合到逻辑电路并由第二电源电压提供的至少一个存储器电路。 即使在使用期间第一电源电压小于第二电源电压，存储器电路被配置为响应于逻辑电路被读取和写入。 在另一个实施例中，一种方法包括：读取存储单元的逻辑电路，由第一电源电压提供的逻辑电路; 并且所述存储单元响应于所读取的使用参考于所述第一电源电压的信号，其中所述存储单元被提供在使用期间大于所述第一电源电压的第二电源电压。

公开(公告)号：US09672310B1

公开(公告)日：2017-06-06

申请号：US14795013

申请日：2015-07-09

Applicant: Apple Inc.

Inventor： Antonietta Oliva ,  John G. Dorsey ,  Keith Cox ,  Norman J. Rohrer ,  Sribalan Santhanam ,  Sung Wook Kang ,  Mohamed H. Abu-Rama ,  Ashish R. Jain

IPC: G06F17/00 ,  G06F17/50 ,  G01R31/28

CPC classification number: G01R31/2894 ,  G01R31/2856 ,  G01R31/2875 ,  G01R31/2879

Abstract: In an embodiment, the amount of supply voltage guardband to prevent incorrect operation due to aging effects may be modeled using an IC-specific age model generated early in the product life cycle of the IC. For example, high temperature operating life (HTOL) testing may be performed at multiple temperatures and/or voltages to develop the IC-specific age model. The IC-specific age model may be more accurate then the calculations used to develop guardband voltage as discussed previously, which rely on the aging of a single transistor. The IC-specific age model may be used along with monitoring of the aging effects during operation of the IC to predict an amount of increased guardband voltage that is currently desirable to apply to the IC. The predicted amount may vary from about zero when the IC is new to the full amount of guardband voltage when the IC is nearing end of life.

公开(公告)号：US20160307621A1

公开(公告)日：2016-10-20

申请号：US15133400

申请日：2016-04-20

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C11/419 ,  H03K19/0185 ,  H03K3/356

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

公开(公告)号：US08848463B2

公开(公告)日：2014-09-30

申请号：US14095648

申请日：2013-12-03

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C7/00 ,  G11C11/417 ,  G11C11/419 ,  G11C8/08 ,  G11C7/12 ,  G11C5/14

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

公开(公告)号：US08625368B2

公开(公告)日：2014-01-07

申请号：US13787894

申请日：2013-03-07

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C7/00

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

Abstract translation: 在一个实施例中，集成电路包括由第一电源电压提供的至少一个逻辑电路和耦合到逻辑电路并由第二电源电压提供的至少一个存储器电路。 即使在使用期间第一电源电压小于第二电源电压，存储器电路被配置为响应于逻辑电路被读取和写入。 在另一个实施例中，一种方法包括：读取存储单元的逻辑电路，由第一电源电压提供的逻辑电路; 并且所述存储单元响应于所读取的使用参考于所述第一电源电压的信号，其中所述存储单元被提供在使用期间大于所述第一电源电压的第二电源电压。

公开(公告)号：US20180130524A1

公开(公告)日：2018-05-10

申请号：US15861308

申请日：2018-01-03

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C11/419 ,  H03K19/0185

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

公开(公告)号：US20140362639A1

公开(公告)日：2014-12-11

申请号：US14467633

申请日：2014-08-25

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C11/419 ,  G11C7/12 ,  G11C8/08

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

Abstract translation: 在一个实施例中，集成电路包括由第一电源电压提供的至少一个逻辑电路和耦合到逻辑电路并由第二电源电压提供的至少一个存储器电路。 即使在使用期间第一电源电压小于第二电源电压，存储器电路被配置为响应于逻辑电路被读取和写入。 在另一个实施例中，一种方法包括：读取存储单元的逻辑电路，由第一电源电压提供的逻辑电路; 并且所述存储单元响应于所读取的使用参考于所述第一电源电压的信号，其中所述存储单元被提供在使用期间大于所述第一电源电压的第二电源电压。

公开(公告)号：US20140092676A1

公开(公告)日：2014-04-03

申请号：US14095648

申请日：2013-12-03

Applicant: Apple Inc.

Inventor： Brian J. Campbell ,  Vincent R. von Kaenel ,  Daniel C. Murray ,  Gregory S. Scott ,  Sribalan Santhanam

IPC: G11C11/419

CPC classification number: G11C11/419 ,  G11C5/143 ,  G11C7/00 ,  G11C7/12 ,  G11C8/08 ,  G11C11/417 ,  H03K3/35613 ,  H03K19/018528

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.