公开(公告)号：US20230411462A1

公开(公告)日：2023-12-21

申请号：US18460290

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L29/423 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L29/40114 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/42324

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.

公开(公告)号：US20220123114A1

公开(公告)日：2022-04-21

申请号：US17073060

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/423

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å

公开(公告)号：US20230274968A1

公开(公告)日：2023-08-31

申请号：US18143895

申请日：2023-05-05

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Zeqiong Zhao ,  Sang-Jin Kim ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/683 ,  H02N13/00 ,  C25D7/00

CPC classification number: H01L21/6833 ,  H02N13/00 ,  C25D7/00

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

公开(公告)号：US20220122872A1

公开(公告)日：2022-04-21

申请号：US17073071

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Zeqiong Zhao ,  Sang-Jin Kim ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/683 ,  C25D7/00 ,  H02N13/00

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

公开(公告)号：US12159785B2

公开(公告)日：2024-12-03

申请号：US18464805

申请日：2023-09-11

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Abhigyan Keshri ,  Allison Yau

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H10B41/20 ,  H10B43/20

Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US11784229B2

公开(公告)日：2023-10-10

申请号：US17073060

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Sang-Jin Kim ,  Zeqiong Zhao ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/28 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/311

CPC classification number: H01L29/40114 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/42324

Abstract: Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.

公开(公告)号：US11646216B2

公开(公告)日：2023-05-09

申请号：US17073071

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Akhil Singhal ,  Allison Yau ,  Zeqiong Zhao ,  Sang-Jin Kim ,  Zhijun Jiang ,  Deenesh Padhi ,  Ganesh Balasubramanian

IPC: H01L21/683 ,  H02N13/00 ,  C25D7/00

CPC classification number: H01L21/6833 ,  C25D7/00 ,  H02N13/00

Abstract: Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

公开(公告)号：US20250116001A1

公开(公告)日：2025-04-10

申请号：US18482560

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Allison Yau ,  Manoj Kumar Jana ,  Wen-Shan Lin ,  Zhiling Dun ,  Xinhai Han ,  Deenesh Padhi ,  Jian Li ,  Yuanchang Chen ,  Wenhao Zhang ,  Edward P. Hammond ,  Alexander V. Garachtchenko ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Sathya Ganta

IPC: C23C16/458 ,  C23C16/34 ,  C23C16/40 ,  H01J37/32

Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.

公开(公告)号：US11798803B2

公开(公告)日：2023-10-24

申请号：US16844794

申请日：2020-04-09

Applicant: Applied Materials, Inc.

Inventor： Daemian Raj Benjamin Raj ,  Gregory Eugene Chichkanoff ,  Shailendra Srivastava ,  Sai Susmita Addepalli ,  Nikhil Sudhindrarao Jorapur ,  Abhigyan Keshri ,  Allison Yau

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  H10B41/20 ,  H10B43/20

CPC classification number: H01L21/022 ,  C23C16/4583 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H10B41/20 ,  H10B43/20

Abstract: In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

公开(公告)号：US11538677B2

公开(公告)日：2022-12-27

申请号：US17009002

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/34

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.