公开(公告)号：US20160372324A1

公开(公告)日：2016-12-22

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

Abstract translation: 公开了通过原子层沉积沉积氧化钛膜的方法。 氧化钛膜可以包括氮化钛盖，富氧氮化钛盖或混合氧化物氮化物层。 还描述了包括氧化钛间隔膜的自对准双重图案的方法。

公开(公告)号：US09275865B2

公开(公告)日：2016-03-01

申请号：US14068301

申请日：2013-10-31

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Joshua Collins ,  Michael Jackson ,  Avgerinos V. Gelatos ,  Amit Khandelwal

IPC: H01L21/322 ,  H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/14

CPC classification number: H01L21/28556 ,  C23C16/0227 ,  C23C16/14 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for plasma treatment of films to remove impurities are disclosed herein. Methods for removing impurities can include positioning a substrate with a barrier layer in a processing chamber, the barrier layer comprising a barrier metal and one or more impurities, maintaining the substrate at a bias, creating a plasma comprising a treatment gas, the treatment gas comprising an inert gas, delivering the treatment gas to the substrate to reduce the ratio of one or more impurities in the barrier layer, and reacting a deposition gas comprising a metal halide and hydrogen-containing gas to deposit a bulk metal layer on the barrier layer. The methods can further include the use of diborane to create selective nucleation in features over surface regions of the substrate.

Abstract translation: 本文公开了等离子体处理膜以去除杂质的方法。 用于去除杂质的方法可以包括将具有阻挡层的衬底定位在处理室中，阻挡层包含阻挡金属和一种或多种杂质，保持衬底处于偏压状态，产生包含处理气体的等离子体，所述处理气体包括 惰性气体，将处理气体输送到基板以减少阻挡层中的一种或多种杂质的比例，以及使包含金属卤化物和含氢气体的沉积气体在阻挡层上沉积体金属层。 该方法还可以包括使用乙硼烷在基材的表面区域上产生特征的选择性成核。

公开(公告)号：US09169556B2

公开(公告)日：2015-10-27

申请号：US13968057

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC: C23C16/08 ,  C23C16/14 ,  C23C16/50 ,  C23C16/452

CPC classification number: C23C16/452 ,  C23C16/08 ,  C23C16/50

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract translation: 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

公开(公告)号：US20140273451A1

公开(公告)日：2014-09-18

申请号：US13914738

申请日：2013-06-11

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Amit Khandelwal ,  Avegerinos V. Gelatos ,  Joshua Collins ,  Kedar Sapre ,  Nitin K. Ingle

IPC: H01L21/285

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

Abstract: Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

Abstract translation: 描述了用钨填充间隙的方法。 这些方法包括用于增强间隙填充的钨去蚀刻 - 去除序列，但是避免在中间蚀刻之后重新开始沉积的困难。 第一钨沉积可以具有成核层或接种层以帮助第一钨沉积的生长。 用不太导电的成核层重新开始沉积将影响集成电路的功能，因此避免在蚀刻期间的钨“中毒”。 可以使用等离子体来进行蚀刻步骤，以在较低温度（接近室温或更低温度）的衬底下激发含卤素的前体。 等离子体可能是本地或远程的。 另一种方法可以组合使用或单独使用，并且涉及将氧源引入与含卤素前体组合的等离子体中。

公开(公告)号：US09881787B2

公开(公告)日：2018-01-30

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

公开(公告)号：US20140106083A1

公开(公告)日：2014-04-17

申请号：US13968057

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： KAI WU ,  Kiejin Park ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Kazuya Daito ,  Joshua Collins ,  Benjamin C. Wang

IPC: C23C16/452

CPC classification number: C23C16/452 ,  C23C16/08 ,  C23C16/50

Abstract: A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.

Abstract translation: 本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。 该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中 将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二 使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。