HIGH PRESSURE AND HIGH TEMPERATURE ANNEAL CHAMBER

    公开(公告)号:US20220013375A1

    公开(公告)日:2022-01-13

    申请号:US17329948

    申请日:2021-05-25

    Abstract: Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end.

    ANNEALING SYSTEM AND METHOD
    2.
    发明申请

    公开(公告)号:US20190139793A1

    公开(公告)日:2019-05-09

    申请号:US16170683

    申请日:2018-10-25

    Abstract: A system for annealing substrates is provided. The system includes a first boiler having an input coupled to a water source; a second boiler having an input connected to an output of the first boiler; and a batch processing chamber coupled to the output of the second boiler, wherein the batch processing chamber is configured to anneal a plurality of substrates using steam from the second boiler.

    FLUOROPOLYMER STAMP FABRICATION METHOD

    公开(公告)号:US20220373883A1

    公开(公告)日:2022-11-24

    申请号:US17883422

    申请日:2022-08-08

    Abstract: An imprint lithography stamp includes a stamp body having a patterned surface and formed from a fluorinated ethylene propylene copolymer. The imprint lithography stamp further includes a backing plate with a plurality of through-holes with portions of the stamp body extending into the through-holes to adhere the stamp body to the backing plate. The patterned surface of the stamp body has a plurality of protrusions extending from the stamp body, which are used to form high aspect ratio features at high processing temperatures. A mold design for forming the imprint lithography stamp and an injection molding process for forming the imprint lithography stamp are also provided.

    DRYING PROCESS FOR HIGH ASPECT RATIO FEATURES

    公开(公告)号:US20170098541A1

    公开(公告)日:2017-04-06

    申请号:US15268162

    申请日:2016-09-16

    Abstract: A method for processing a substrate is disclosed. The method includes delivering a solvent to a processing chamber and delivering a substrate to the processing chamber. The amount of solvent present in the processing chamber may be configured to submerse the substrate. Liquid CO2 may be delivered to the processing chamber and the liquid CO2 may be mixed with the solvent. Additional liquid CO2 may be delivered to the processing chamber in an amount greater than a volume of the processing chamber to displace the solvent. The liquid CO2 may be phase transitioned to supercritical CO2 in the processing chamber and the substrate may be dried by isothermally depressurizing the processing chamber and exhausting gaseous CO2 from the processing chamber.

    CROSS WEB TENSION MEASUREMENT AND CONTROL

    公开(公告)号:US20220356026A1

    公开(公告)日:2022-11-10

    申请号:US17721107

    申请日:2022-04-14

    Abstract: The present disclosure generally relates to systems and methods for transporting a web through a web processing apparatus. In one aspect, a web tension adjustment unit for guiding a web. The web tension adjustment unit includes a first guide roller. The first guide roller includes an adjustment unit. The web tension adjustment unit further includes one or more first non-contact sensors positioned to measure displacement data of the web at a first location. The web tension adjustment unit further includes a system controller for controlling the adjustment unit based on the measured displacement data.

    HIGH PRESSURE AND HIGH TEMPERATURE ANNEAL CHAMBER

    公开(公告)号:US20200243345A1

    公开(公告)日:2020-07-30

    申请号:US16849604

    申请日:2020-04-15

    Abstract: Disclosed herein is an apparatus and method for annealing semiconductor substrates. In one example a temperature-controlled fluid circuit includes a condenser configured to fluidly connect to an internal volume of a processing chamber. The processing chamber has a body, the internal volume is within the body. The condenser is configured to condense a processing fluid into liquid phase. A source conduit includes a first terminal end that couples to a first port on the body of the processing chamber. The source conduit includes a second terminal end. The first terminal end couples to a gas panel. The gas panel is configured to provide a processing fluid into the internal volume of the processing chamber. A gas conduit includes a first end. The first end couples to the condenser and a second end. The second end is configured to couple to a second port on the body of the processing chamber.

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