公开(公告)号：US11114306B2

公开(公告)日：2021-09-07

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Jethro Tannos ,  Jingyi Li ,  Douglas A. Buchberger, Jr. ,  Zhong Qiang Hua ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/505 ,  H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US11631591B2

公开(公告)日：2023-04-18

申请号：US17408943

申请日：2021-08-23

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. Citla ,  Jethro Tannos ,  Jingyi Li ,  Douglas A. Buchberger, Jr. ,  Zhong Qiang Hua ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/505 ,  H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517

Abstract: Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.