公开(公告)号：US20250126867A1

公开(公告)日：2025-04-17

申请号：US18379928

申请日：2023-10-13

Applicant: Applied Materials, Inc.

Inventor： Srinivas Gandikota ,  Yixiong Yang ,  Seshadri Ganguli ,  Geetika Bajaj ,  Debaditya Chatterjee ,  Hsin-Jung Yu ,  Tuerxun Ailihumaer ,  Tengzhou Ma ,  Lin Sun

IPC: H01L29/40 ,  H01L21/324 ,  H01L29/49 ,  H01L29/51

Abstract: Methods of scaling the thickness of the interfacial layer in electronic devices, such as NMOS transistors and PMOS transistors are described. Some embodiments provide a metal film or a metal nitride film that reduces the thickness of the interfacial layer by scavenging unbound oxygen from the interfacial layer (e.g., silicon oxide (SiOx)) and the high-κ dielectric layer (e.g., hafnium oxide (HfOx)). Some embodiments advantageously include annealing the semiconductor substrate to promote or accelerate the scavenging.

公开(公告)号：US20230008986A1

公开(公告)日：2023-01-12

申请号：US17861395

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Prahallad Iyengar ,  Sanjeev Baluja ,  Kartik Shah ,  Chaowei Wang ,  Janisht Golcha ,  Eric J. Hoffmann ,  Joseph AuBuchon ,  Ashutosh Agarwal ,  Lin Sun ,  Cong Trinh

IPC: C23C16/455

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.