公开(公告)号：US12015042B2

公开(公告)日：2024-06-18

申请号：US16797807

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Papo Chen ,  Schubert Chu ,  Errol Antonio C Sanchez ,  John Timothy Boland ,  Zhiyuan Ye ,  Lori Washington ,  Xianzhi Tao ,  Yi-Chiau Huang ,  Chen-Ying Wu

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/1892

Abstract: A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

公开(公告)号：US20240145246A1

公开(公告)日：2024-05-02

申请号：US17973927

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  In Soo Jung ,  Sean S. Kang ,  Srinivas D. Nemani ,  Papo Chen ,  Ellie Y. Yieh

IPC: H01L21/223 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/223 ,  H01L21/02236 ,  H01L21/3065

Abstract: Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. A silicon-containing material may be formed on the substrate. The methods may include contacting the silicon-containing material with the silicon-containing precursor and the dopant precursor. The methods may include forming a doped silicon-containing material on the silicon-containing material. The methods may include oxidizing the substrate. The oxidizing may form an oxidized doped silicon-containing material. The methods may include etching the oxidized doped silicon-containing material.

公开(公告)号：US11411039B2

公开(公告)日：2022-08-09

申请号：US16878142

申请日：2020-05-19

Applicant: Applied Materials, Inc.

Inventor： Papo Chen ,  John Boland ,  Schubert S. Chu ,  Errol Antonio C. Sanchez ,  Stephen Moffatt

IPC: H01L31/18 ,  H01L27/146

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.