公开(公告)号：US10090187B2

公开(公告)日：2018-10-02

申请号：US15608472

申请日：2017-05-30

Applicant: Applied Materials, Inc.

Inventor： Xing Lin ,  Bozhi Yang ,  Jianhua Zhou ,  Dale R. Dubois ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan

IPC: H05B3/68 ,  H01L21/687 ,  H01L21/67 ,  C23C16/458 ,  C23C16/50

Abstract: A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.

公开(公告)号：US09593419B2

公开(公告)日：2017-03-14

申请号：US14632648

申请日：2015-02-26

Applicant: Applied Materials, Inc.

Inventor： Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan ,  Robert Kim ,  Dale R. Du Bois ,  Kirby Hane Floyd ,  Amit Kumar Bansal ,  Tuan Anh Nguyen

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/4584 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32623 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32743 ,  H01J2237/3321 ,  H01L21/67103 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.

Abstract translation: 提供了一种用于处理衬底的方法和设备。 该装置包括基座和旋转构件，两者都可移动地设置在处理室内。 旋转构件适于旋转设置在腔室中的衬底。 衬底可以在加工过程中被边缘环支撑。 边缘环可以选择性地接合基座或旋转构件。 在一个实施例中，边缘环在沉积工艺期间接合基座，并且边缘环在基底旋转期间接合旋转构件。 处理过程中衬底的旋转可以是离散的或连续的。

公开(公告)号：US09206511B2

公开(公告)日：2015-12-08

申请号：US14087671

申请日：2013-11-22

Applicant: Applied Materials, Inc.

Inventor： Ramprakash Sankarakrishnan ,  Dale R. Du Bois ,  Ganesh Balasubramanian ,  Karthik Janakiraman ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad

IPC: C23C16/00 ,  C23C16/44 ,  F16K31/08 ,  B08B5/00 ,  C23C16/455 ,  B08B7/00 ,  F16K31/06

CPC classification number: F16K31/0655 ,  B08B5/00 ,  B08B7/0021 ,  C23C16/4405 ,  C23C16/4409 ,  C23C16/45561 ,  F16K1/221 ,  F16K1/224 ,  F16K31/06 ,  F16K31/088 ,  Y10S438/905

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Abstract translation: 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。

公开(公告)号：US11898249B2

公开(公告)日：2024-02-13

申请号：US18108989

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward W. Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC: C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/458 ,  C23C16/4557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687 ,  G01N2201/1222

Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US10544508B2

公开(公告)日：2020-01-28

申请号：US14035138

申请日：2013-09-24

Applicant: Applied Materials, Inc.

Inventor： Juan Carlos Rocha-Alvarez ,  Amit Kumar Bansal ,  Ganesh Balasubramanian ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan

IPC: C23C16/50 ,  H01L21/67 ,  H01J37/32

Abstract: An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor such as a face plate coupled to a power source, and a heater coupled to the conductive gas distributor. A zoned blocker plate is coupled to the conductive gas distributor and a cooled gas cap is coupled to the zoned blocker plate. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.

公开(公告)号：US10541159B2

公开(公告)日：2020-01-21

申请号：US15165930

申请日：2016-05-26

Applicant: Applied Materials, Inc.

Inventor： Orlando Trejo ,  Ramprakash Sankarakrishnan ,  Tza-Jing Gung

IPC: H01L21/67 ,  G02B19/00 ,  G02B3/08

Abstract: Embodiments disclosed herein relate to a processing chamber having a lens disposed therein. In one embodiment, the processing chamber includes a chamber body, a substrate support assembly, a light source, and a lens. The chamber body defines an interior volume of the processing chamber. The interior volume has a first area and a second area. The substrate support assembly is disposed in the second area. The substrate support assembly is configured to support a substrate. The light source is disposed above the substrate support assembly in the first area. The lens is disposed between the light source and the substrate support assembly. The lens includes a plurality of features formed therein. The plurality of features is configured to preferentially direct light from the light source to an area of interest on the substrate when disposed on the substrate support assembly.

公开(公告)号：US10290459B2

公开(公告)日：2019-05-14

申请号：US16163226

申请日：2018-10-17

Applicant: Applied Materials, Inc.

Inventor： Govinda Raj ,  Simon Yavelberg ,  Ramprakash Sankarakrishnan

IPC: H01J23/00 ,  B22F5/10 ,  B33Y80/00 ,  B22F3/105 ,  H01J25/50

Abstract: Magnetron configurations that provide more efficient and/or more uniform cooling characteristics and methods for forming the magnetrons are provided. The magnetron includes one or more flow directing structures disposed between parallel cooling fins. The flow directing structures direct air flow across various surfaces of the cooling fins that otherwise would be obstructed by magnetron components, reducing the incidence and/or magnitude of hot spots on the cooling fins and/or on other magnetron components. The flow directing structures also adjust flow rates to improve cooling efficiency.

公开(公告)号：US09428424B2

公开(公告)日：2016-08-30

申请号：US14623402

申请日：2015-02-16

Applicant: Applied Materials, Inc.

Inventor： Ren-Guan Duan ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan

IPC: B01J19/12 ,  C04B41/00 ,  F27D19/00 ,  F27D7/06 ,  C04B41/80 ,  C23C14/56 ,  C23C16/44 ,  F27B17/00 ,  C04B35/111 ,  C04B35/488 ,  C04B35/50 ,  C04B35/505 ,  C04B35/565 ,  C04B35/581 ,  C04B35/587 ,  C03C23/00

CPC classification number: C04B41/0081 ,  C03C23/007 ,  C04B35/111 ,  C04B35/488 ,  C04B35/50 ,  C04B35/505 ,  C04B35/565 ,  C04B35/581 ,  C04B35/587 ,  C04B41/009 ,  C04B41/80 ,  C04B2235/3225 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/96 ,  C23C14/564 ,  C23C16/4401 ,  F27B17/0025 ,  F27D7/06 ,  F27D19/00 ,  F27D2007/063 ,  F27D2019/0028 ,  C04B35/00 ,  C04B35/10 ,  C04B35/584 ,  C04B35/48

Abstract: Embodiments described herein generally relate to apparatus and methods for thermally treating chamber components for use in ultraviolet semiconductor processing chambers. Thermal treatment of chamber components comprising unitary ceramic or glass articles may reduce the probability of particle generation when the chamber components are exposed to corrosive environments, such as exposure to ultraviolet light and ozone/oxygen radicals. A method of thermally treating chamber components includes heating the unitary article at an acceptable ramp rate to a desired temperature for a desired time period and subsequently cooling the unitary article at the ramping rate.

Abstract translation: 本文描述的实施方案一般涉及用于紫外线半导体处理室中用于热处理腔室部件的设备和方法。 包括单一陶瓷或玻璃制品的腔室部件的热处理可能会降低室内部件暴露于腐蚀性环境（如暴露于紫外线和臭氧/氧自由基）时产生颗粒的可能性。 热处理腔室部件的方法包括以可接受的斜坡速率将整体制品加热到期望的温度达所需的时间段，随后以斜坡速率冷却整体制品。

公开(公告)号：US10811301B2

公开(公告)日：2020-10-20

申请号：US16660385

申请日：2019-10-22

Applicant: Applied Materials, Inc.

Inventor： Xing Lin ,  Jianhua Zhou ,  Juan Carlos Rocha-Alvarez ,  Ramprakash Sankarakrishnan

IPC: H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

Abstract: A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft.

公开(公告)号：US10370764B2

公开(公告)日：2019-08-06

申请号：US14522196

申请日：2014-10-23

Applicant: Applied Materials, Inc.

Inventor： Ramprakash Sankarakrishnan

IPC: H01L21/00 ,  C23C16/00 ,  C23C16/513 ,  H01J37/32 ,  C23C16/509

Abstract: A processing kit for a plasma processing chamber. The processing kit includes a plurality of ceramic arc-shaped pieces. Each arc-shaped piece has a concave first end and a convex second end and the first end of each arc-shaped piece is configured to mate with an adjacent end of a neighboring arc-shaped piece to form a ring shaped inner isolator.