公开(公告)号：US20250022704A1

公开(公告)日：2025-01-16

申请号：US18221240

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Qiang Ma ,  Biao Liu ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh ,  Taiki Hatakeyama ,  Shreyas Shukla ,  Mei-Yee Shek

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.