公开(公告)号：US10156489B2

公开(公告)日：2018-12-18

申请号：US15414956

申请日：2017-01-25

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Hung-Lin Yin ,  Cheng-Yi Chiang ,  Yu-Che Huang

IPC: G01L9/00 ,  G01L9/06

Abstract: A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.

公开(公告)号：US20170219449A1

公开(公告)日：2017-08-03

申请号：US15414956

申请日：2017-01-25

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Hung-Lin Yin ,  Cheng-Yi Chiang ,  Yu-Che Huang

IPC: G01L9/00 ,  G01L9/06

CPC classification number: G01L9/0044 ,  G01L9/0047 ,  G01L9/0055 ,  G01L9/06

Abstract: A piezoresistive pressure sensor includes a substrate and a silicon device layer. The substrate has a cavity. The silicon device layer includes a diaphragm and a support element. A top surface of the diaphragm is connected to a top surface of the support element by one or more side surfaces. A recess of the silicon device layer is defined by the top surface of the diaphragm and the one or more side surfaces. A plurality of piezoresistive regions are on the top surface of the diaphragm, on the one or more side surfaces and on the top surface of the support element. A plurality of conductive regions are on the top surface of the support element. The plurality of conductive regions do not extend to the top surface of the diaphragm. The plurality of piezoresistive regions have a first ion dosage concentration. The plurality of conductive regions have a second ion dosage concentration. The second ion dosage concentration is greater than the first ion dosage concentration.