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1.发明申请
公开(公告)号：WO2008071768A3
公开(公告)日：2008-08-21
申请号：PCT/EP2007063893
申请日：2007-12-13
Applicant: BASF SE , KUEHLING KLAUS , HALBRITTER KLAUS , HAASS FRANK , STERZEL HANS-JOSEF , RITTER HELMUT , AMAJJAHE SADIK
Inventor： KUEHLING KLAUS , HALBRITTER KLAUS , HAASS FRANK , STERZEL HANS-JOSEF , RITTER HELMUT , AMAJJAHE SADIK
CPC classification number: B01J8/06 , B01J8/002 , B01J8/0045 , B01J2208/00752 , B01J2208/00769 , C08J7/08 , C08J7/123 , C08J2375/00 , C08K5/0033 , C08K5/3445
Abstract: The present invention relates to methods of separating adhesively bonded substrates by irradiation with microwaves, with one of the substrates consisting partly or entirely of a material which decomposes at least partially on absorption of microwave radiation, and the use of these methods for the parting of specific substrates.
Abstract translation: 本发明涉及用于通过照射微波，其中所述基板中的一个部分地或完全地与微波辐射的吸收至少部分，以及使用这些方法用于解决特定底物分解的材料构成的分离材料配合键合的衬底。
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公开(公告)号：CA2710789A1
公开(公告)日：2009-07-09
申请号：CA2710789
申请日：2008-12-19
Applicant: BASF SE
Inventor： KUEHLING KLAUS , STERZEL HANS-JOSEF , HAASS FRANK
Abstract: With respect to a method for reducing the thermal conductivity and for increasing the thermoelectric efficiency of thermoelectric materials based on lead chalcogenides or skutterudites, the thermoelectrical materials are extruded at a temperature below their melting point and a pressure in the range of 300 to 1000 MPa.
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3.发明申请DOPED BI-TE COMPOUNDS FOR THERMOELECTRIC GENERATORS AND PELTIER ARRANGEMENTS 审中-公开掺杂BI TE链路热电发电机和PELTIER地层
公开(公告)号：WO2008028852A3
公开(公告)日：2008-11-27
申请号：PCT/EP2007059007
申请日：2007-08-29
Applicant: BASF SE , STERZEL HANS-JOSEF , HAASS FRANK , DECK PATRICK
Inventor： STERZEL HANS-JOSEF , HAASS FRANK , DECK PATRICK
IPC: H01L35/16 , C01B19/00 , C04B35/515 , H01L35/34
CPC classification number: H01L35/16 , C01B19/007 , C01P2002/52 , C04B35/547 , C04B35/645 , C04B35/653 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3287 , C04B2235/3294 , C04B2235/3298 , C04B2235/6021 , C04B2235/77 , H01L35/34
Abstract: A p-conductive or n-conductive semiconductor material contains a Ge-, Co-, Fe- and/or Ni-doped bismuth telluride of the general formula (I) or (II) Bi2-xDopuSeyTez (I) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.06 y = 0.01 to 1.0 y+z = 3.00 to 3.2 Bi2-xSb yDopuSezTev (II) with the meaning Dop = Ge, Co, Fe, Ni or mixtures thereof u, x = independently of one another 0.001 to 0.4 y = 0 to 1 z = 0 to 1 z+v = 3.00 to 3.3.
Abstract translation: 甲p型或n型半导体材料的步骤包括一个掺杂有锗，Co，Fe和/或Ni铋具有通式（I）或碲化物（II）的Bi-xDopuSeyTez（I）与所述的含义DOP =葛，钴，铁，镍 或它们的混合物，U，X = 0.001独立地〜0.06 Y = 0.01〜1.0，Y + Z = 3.00〜3.2的Bi-Sb的yDopuSezTev（II）与所述含义DOP =葛，钴， 的Fe，Ni或它们的混合物，U，X = 0.001独立地至0.4 Y = 0至1 Z = 0至1 Z + v = 3.00〜3.3。
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公开(公告)号：WO2011012548A3
公开(公告)日：2011-05-26
申请号：PCT/EP2010060713
申请日：2010-07-23
Applicant: BASF SE , STEFAN MADALINA ANDREEA , HAASS FRANK
Inventor： STEFAN MADALINA ANDREEA , HAASS FRANK
CPC classification number: H01L35/34 , B22F2998/00 , B22F2999/00 , C04B35/547 , C04B35/64 , C04B35/645 , C04B35/6455 , C04B2235/3296 , C04B2235/404 , C04B2235/6021 , C04B2235/604 , C04B2235/658 , C04B2235/6582 , C04B2235/6588 , C04B2235/666 , C22C1/0483 , C22C1/0491 , H01L35/14 , B22F3/14 , B22F3/15 , B22F3/105 , B22F3/20 , B22F2201/013 , B22F2201/04 , B22F2201/10
Abstract: The method for producing, processing, sintering, pressing or extruding thermoelectric materials under heat treatment using an inert gas, or at a reduced pressure at temperatures ranging from 100 to 900 °C is characterised in that the producing, processing, sintering, pressing or extruding is carried out in the presence of oxygen scavengers which form thermodynamically stable oxides under the producing, processing, sintering, pressing or extrusion conditions in the presence of free oxygen and thus keep free oxygen away from the thermoelectric material.
Abstract translation: 制造，加工，烧结，压制或在惰性气体下或在减压下加热处理下的热电材料的挤出温度的范围为100至900℃的方法的特征在于，生产，加工，烧结，在存在压制或挤出 发生氧清除剂，在制造，加工，烧结，在游离氧的热力学稳定的氧化物和游离氧的存在下压制或挤出条件保持从热电材料远离形成。
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公开(公告)号：WO2009098248A3
公开(公告)日：2010-02-25
申请号：PCT/EP2009051298
申请日：2009-02-05
Applicant: BASF SE , HAASS FRANK
Inventor： HAASS FRANK
CPC classification number: C01B19/002 , C01B19/007 , C01P2006/40 , H01L23/38 , H01L35/16 , H01L35/34 , H01L2924/0002 , Y02P20/129 , H01L2924/00
Abstract: The p- or n-conductive semiconductor material contains a compound of general formula (I) Sna Pb1-a-(x1+... +xn) A1 x1...An xn (Te1-p-q-r SepSqXr)1+z in which 0.05
Abstract translation: 的p型或n型半导体材料包含通式（I）SNA PB1-A-的化合物（X1 + ... + xn）映射A1 X1 ... anxn（Te1的-PQR SepSqXr）1 + Z（I）与 = 1 Sn和Pb的不同的化学元素的n个各自独立地为1ppm = X1 ... XN重要性0.05 <α<1，N = 0.05; A1 ...彼此的不同，并从组中的元素的锂，钠，钾，铷，铯，镁，钙，Y，钛，锆，铪，铌，钽，铬，锰，铁，铜，银中选择， 金，镓，铟，铊，锗，锑，铋; X是F，Cl，Br或升; 0 = P = 1; 0 = Q = 1; = 0 R = 0.01; - 0.01 = Z = 0.01的条件下是p + q + R = 1个a + X1 + ... + XN = 1。另外，一种方法是根据权利用于制造这样的半导体材料，热电发电机或 珀耳帖组件和使用这种。
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Patent Agency Ranking
公开(公告)号：SG174453A1
公开(公告)日：2011-10-28
申请号：SG2011067311
申请日：2010-03-23
Applicant: BASF SE
Inventor： HAASS FRANK , KOENIG JAN DIETER
Abstract: Abstract SELF-ORGANISING THERMOELECTRIC MATERIALSIn a process for producing thermoelectric maerials with a potyphasic structure, in which particles of a trst phase with a characteristic lenqth of not more than 10 pm are5 present in homogeneous dispersion in a second phase, by selfassembly, an a binary thermoelectric material is melted together with a metal which is not a componentof the at feast binarythermoelectricmeeleetrie material, or a chabogenide of said met* and, after led or bonded by reactive grinding,10 No suitable figure
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公开(公告)号：SG174144A1
公开(公告)日：2011-10-28
申请号：SG2011060670
申请日：2010-02-22
Applicant: BASF SE
Inventor： HAASS FRANK
Abstract: Method for producing flexible metal contactsAbstract To produce flexible electrical and/or thermal metal contacts for connecting electrical,electronic or thermal components, metal fibers, metal fiber nonwovens or metal fiberwovens with an average fiber diameter in the range from 1 to 500 µm are compactedby rolling, pressing or extruding involving cold working to form fibrous sheets.Figure 1
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公开(公告)号：WO2010108912A3
公开(公告)日：2011-06-03
申请号：PCT/EP2010053762
申请日：2010-03-23
Applicant: BASF SE , HAASS FRANK , KOENIG JAN DIETER
Inventor： HAASS FRANK , KOENIG JAN DIETER
CPC classification number: C01B19/007 , C01B17/20 , C01B19/002 , C01P2004/80 , C01P2006/40 , H01L35/16 , H01L35/26 , H01L35/34 , Y02P20/129
Abstract: In a method for producing thermoelectric materials with a multi-phase structure, in which particles of a first phase with a characteristic maximum length of 10 µm are uniformly dispersed in a second phase, by self-organisation, an at least binary thermoelectric material is melted together with a metal that is not a component of the at least binary thermoelectric material or with a chalcogenide of said metal and is cooled after the mixing process or is bonded by reactive milling.
Abstract translation: 存在于用于制备具有多相位结构的热电材料，其中具有在第二阶段中至多10微米的特征长度的第一相的粒子均匀分散的，通过自组装的方法是具有金属至少二元热电材料没有的成分 是至少二元热电材料，或熔化该金属在常见的硫族化物，并混合或通过反应性研磨接合后冷却。
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公开(公告)号：WO2009083508A3
公开(公告)日：2010-01-14
申请号：PCT/EP2008068085
申请日：2008-12-19
Applicant: BASF SE , KUEHLING KLAUS , STERZEL HANS-JOSEF , HAASS FRANK
Inventor： KUEHLING KLAUS , STERZEL HANS-JOSEF , HAASS FRANK
CPC classification number: B21C23/002 , H01L35/16 , H01L35/34
Abstract: With respect to a method for reducing the thermal conductivity and for increasing the thermoelectric efficiency of thermoelectric materials based on lead chalcogenides or skutterudites, the thermoelectrical materials are extruded at a temperature below their melting point and a pressure in the range of 300 to 1000 MPa.
Abstract translation: 用于降低热导率的方法，增加基于硫族化合物或方钴矿热电材料的热电效率，在低于其熔点的温度下所述热电材料和在300至1000兆帕的范围内的压力挤出。
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公开(公告)号：AT519234T
公开(公告)日：2011-08-15
申请号：AT08867452
申请日：2008-12-19
Applicant: BASF SE
Inventor： KUEHLING KLAUS , STERZEL HANS-JOSEF , HAASS FRANK
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