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    DITHIENOBENZO-THIENO[3,2-B]THIOPHENE-COPOLYMER AND ITS USE AS HIGH PERFORMANCE SOLUTION PROCESSABLE SEMICONDUCTING POLYMER
    1.
    发明申请
    DITHIENOBENZO-THIENO[3,2-B]THIOPHENE-COPOLYMER AND ITS USE AS HIGH PERFORMANCE SOLUTION PROCESSABLE SEMICONDUCTING POLYMER 审中-公开
    二噻吩并噻吩并[3,2-B]噻吩共聚物及其用作高性能溶液处理半导体聚合物

    公开(公告)号：WO2011067192A3

    公开(公告)日：2011-09-15

    申请号：PCT/EP2010068365

    申请日：2010-11-29

    Applicant: BASF SE ,  MAX PLANCK GESELLSCHAFT ,  KASTLER MARCEL ,  KOEHLER SILKE ,  MUELLEN KLAUS ,  RIEGER RALPH

    Inventor： KASTLER MARCEL ,  KOEHLER SILKE ,  MUELLEN KLAUS ,  RIEGER RALPH

    IPC: C08G61/12 ,  H01L51/00 ,  H01L51/05

    CPC classification number: H01L51/0043 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/414 ,  C08G2261/92 ,  H01L51/0036 ,  H01L51/0558 ,  Y02E10/549

    Abstract: Dithienobenzo-thieno[3,2-b]thiophene-copolymers of the formula (I) wherein: pi is a monocyclic or polycyclic moiety optionally substituted with 1-4 Ra groups, wherein Ra, at each occurrence, is independently hydrogen or a) a halogen, b) -CN, c) -NO2, d) oxo, e) -OH, f) =C(Rb)2; g) a C1-20 alkyl group, h) a C2-20 alkenyl group, i) a C2-20 alkynyl group, j) a C1-20 alkoxy group, k) a C1-20 alkylthio group, I) a C1-20 haloalkyl group, m) a -Y- C3-10 cycloalkyl group, n) a -Y- C6-14 aryl group, o) a -Y-3-12 membered cycloheteroalkyl group, or p) a -Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl or haloaryl group, the 3-12 membered cycloheteroalkyl group, and the 5- 14 membered heteroaryl group is optionally substituted with 1 -4 Rb groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and R1, R2, R3, at each occurrence, are independently H, a halogen, CN, a C1-30 alkyl group, a C2-30 alkenyl group, a C1-30 haloalkyl group, a C2-30 alkynyl group, a C1-30 alkoxy group, a C(O)-C1-20 alkyl group, a C(O)-OC1-20 alkyl group, a Y-C3-10 cycloalkyl group, a -Y-3- 12 membered cycloheteroalkyl group, each optionally substituted with 1-5 substituents selected from a halogen, -CN, a C1-6 alkyl group, a C1-6 alkoxy group, and a C1-6 haloalkyl group, -L-Ar1, -L-Ar1 -Ar1, -L-Ar1-R4, or -L-Ar1-Ar1-R4 and Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; n = 0, 1, 2; and o = 1 - 1000.

    Abstract translation: 式（I）的二噻吩并苯并噻吩并[3,2-b]噻吩共聚物其中：p1是任选被1-4个Ra基团取代的单环或多环部分，其中Ra在每次出现时独立地为氢或a） b）-CN，c）-NO 2，d）氧代，e）-OH，f）= C（R b）2; g）C1-20烷基，h）C2-20烯基，i）C2-20炔基，j）C1-20烷氧基，k）C1-20烷硫基，I）C1- 20）卤代烷基，m）-YC 3 -10环烷基，n）-YC 6-14芳基，o）-Y-3-12元环杂烷基，或p）-Y- 14元杂芳基，其中C1-20烷基，C2-20链烯基，C2-20炔基，C3-10环烷基，C6-14芳基或卤代芳基，3-12元 环杂烷基，且所述5-14元杂芳基任选被1-4个Rb基团取代; Y在每次出现时独立地为二价C 1-6烷基，二价C 1-6卤代烷基或共价键; 并且R 1，R 2，R 3每次出现时独立地为H，卤素，CN，C 1-30烷基，C 2-30烯基，C 1-30卤代烷基，C 2-30炔基，C 30的烷氧基，C（O）-C1-20烷基，C（O）-OC1-20烷基，Y-C3-10环烷基，-Y-3-12元环杂烷基 其任选被1-5个选自卤素，-CN，C1-6烷基，C1-6烷氧基和C1-6卤代烷基的取代基取代，-L-Ar1，-L-Ar1-Ar1， - L-Ar1-R4或-L-Ar1-Ar1-R4和Y在每次出现时独立地为二价C1-6烷基，二价C1-6卤代烷基或共价键; n = 0,1,2; 和o = 1 - 1000。

    METHOD FOR PRODUCING SEMICONDUCTIVE LAYERS
    2.
    发明申请
    METHOD FOR PRODUCING SEMICONDUCTIVE LAYERS 审中-公开
    用于生产半导体层

    公开(公告)号：WO2010125011A3

    公开(公告)日：2011-03-31

    申请号：PCT/EP2010055499

    申请日：2010-04-26

    Applicant: BASF SE ,  KARPOV ANDREY ,  FLEISCHHAKER FRIEDERIKE ,  DOMKE IMME ,  KASTLER MARCEL ,  WLOKA VERONIKA ,  WEBER LOTHAR

    Inventor： KARPOV ANDREY ,  FLEISCHHAKER FRIEDERIKE ,  DOMKE IMME ,  KASTLER MARCEL ,  WLOKA VERONIKA ,  WEBER LOTHAR

    IPC: C23C18/12 ,  H01L21/288

    CPC classification number: C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) producing a solution containing at least one precursor compound of the at least one metal oxide selected from the group of carboxylates from monocarboxylic, dicarbonic, or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic, dicarbonic, or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidins, amidrazones, carbamide derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and compounds thereof, in at least one solvent; (B) application of the solvent of step (A) on the substrate; and (C) thermal treatment of the substrate of step (B) at a temperature of 20 to 200 degrees Celsius, in order to transfer the at least one precursor compound in at least one semiconductive metal oxide. In the event that in step (A), electrically neutral [(OH)x(NH3)yZn]z with x, y, and z independently from one another 0.01 to 10, is used as precursor compound, said precursor compound is obtained by conversion of zinc oxide or zinc hydroxide with ammonia; a substrate, which is coated with at least one semiconductive metal oxide, obtainable by said method; the application of said substrate in electronic components; and a method for producing electronically neutral [(OH)x(NH3)yZn]z with x, y, and z independently from one another 0.01 to 10, by conversion of zinc oxide and/or zinc hydroxide with ammonia.

    Abstract translation: 本发明涉及一种方法，用于制造至少包括以下步骤：在基材上含有至少一个半导电金属氧化物的层：（A）制备含有选自单 - 羧酸盐组成的组中的至少一种金属氧化物的至少一种前体化合物的溶液中，二 - 或者具有至少三个碳原子，或单 - ，二 - 或多元羧酸，醇化物，氢氧化物，氨基脲衍生物的多羧酸，Carbaminaten，异羟肟酸盐，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，氨基甲酸乙酯，氨，胺，膦，铵 化合物,,相应金属的叠氮化物和它们的混合物，在至少一种溶剂中，（B）将来自步骤溶液（a）以20〜200的温度的基板和（C）热处理步骤（B）的基板 ℃，在wenigst所述至少一种前体化合物 到ENS转换半导体金属氧化物，其中，如果在步骤（A）是电中性的[（OH）X（NH 3）YZN】Z，其中x，y和z，各自独立地选自0.01通过使用10作为前体化合物，即 涂有至少一个半导电金属氧化物的基板，获得通过该方法，使用该基板的电子部件，以及用于产生电中性的方法[（OH）由氧化锌或者与氨，X氢氧化锌得到的（NH 3） YZN】Z，其中x，y和z独立地是从0.01到10，由氧化锌和/或氢氧化锌与氨反应。

    FIELD EFFECT ELEMENTS
    4.
    发明申请
    FIELD EFFECT ELEMENTS 审中-公开
    场效应元素

    公开(公告)号：WO2009013291A3

    公开(公告)日：2009-04-02

    申请号：PCT/EP2008059598

    申请日：2008-07-22

    Applicant: BASF SE ,  HENNIG INGOLF ,  DOETZ FLORIAN ,  ECKERLE PETER ,  PARASHKOV RADOSLAV ,  KASTLER MARCEL ,  VAIDYANATHAN SUBRAMANIAN

    Inventor： HENNIG INGOLF ,  DOETZ FLORIAN ,  ECKERLE PETER ,  PARASHKOV RADOSLAV ,  KASTLER MARCEL ,  VAIDYANATHAN SUBRAMANIAN

    IPC: H01L51/05 ,  H01L51/30

    CPC classification number: H01L51/052 ,  H01L51/0529

    Abstract: A field effect element comprising: a source electrode and a drain-electrode, a semiconducting layer comprising a semiconducting compound being in contact with the source electrode and the drain electrode, - a gate electrode, and a dielectric layer comprising one or more compounds selected from hygroscopic organic compounds and/or from nanoparticulate inorganic compounds being arranged between the semiconducting layer and the gate electrode, wherein said hygroscopic organic compounds have a water absorption capability of more than 1.2 % by weight, and a hydrophobic insulating layer being arranged between the gate electrode and the dielectric layer preventing diffusion of water into the one or more hygroscopic compounds of the dielectric layer during the time of use of the field effect element, said hydrophobic insulating layer having a water absorption capability of less than 1.2 % by weight, the semiconducting layer, the dielectric layer or the hydrophobic insulating layer, or a combination thereof, being disposable from a liquid; and a process for producting the same.

    Abstract translation: 一种场效应元件，包括：源电极和漏电极，包括与源电极和漏极接触的半导体化合物的半导体层， - 栅电极和包含一种或多种选自以下的化合物的介电层： 吸湿性有机化合物和/或从纳米颗粒无机化合物排列在半导电层和栅电极之间，其中所述吸湿有机化合物具有大于1.2重量％的吸水能力，疏水绝缘层设置在栅电极 以及介电层，其防止在使用场效应元件期间水进入介电层的一种或多种吸湿性化合物，所述疏水性绝缘层的吸水能力小于1.2重量％，所述半导体层 ，介电层或疏水绝缘层，或组合体 从液体中一次性使用; 以及产品的制造过程。

    HIGH PERFORMANCE SOLUTION PROCESSABLE SEMINCONDUCTOR BASED ON DITHIENO [2,3-D:2',3'-D']BENZO[1,2-B:4,5-B'] DITHIOPHENE
    10.
    发明专利
    HIGH PERFORMANCE SOLUTION PROCESSABLE SEMINCONDUCTOR BASED ON DITHIENO [2,3-D:2',3'-D']BENZO[1,2-B:4,5-B'] DITHIOPHENE 未知

    公开(公告)号：CA2729334A1

    公开(公告)日：2010-01-07

    申请号：CA2729334

    申请日：2009-06-25

    Applicant: BASF SE ,  MAX PLANCK GESELLSCHAFT

    Inventor： KASTLER MARCEL ,  KOEHLER SILKE ANNIKA ,  MUELLEN KLAUS ,  GAO PENG ,  BECKMANN DIRK ,  FENG XINLIANG ,  TSAO HOI NOK

    IPC: C07D495/12

    Abstract: Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) -CN, d) -NO2, e) - OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a -Y- C3-10 cycloalkyl group, m) a -Y-C6-14 aryl group, n) a -Y-3-12 membered cyclo- heteroalkyl group, or o) a -Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc- loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1 -4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2. The invention also relates to the use of the dithienobenzodithiophenes according to any of claims 1 to 4 as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.

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