Process for the generation of thin inorganic films

    公开(公告)号:US10801105B2

    公开(公告)日:2020-10-13

    申请号:US15775856

    申请日:2016-11-18

    Applicant: BASF SE

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.

    Process for the recycling of spent lithium ion cells

    公开(公告)号:US12134803B2

    公开(公告)日:2024-11-05

    申请号:US17250339

    申请日:2019-07-09

    Applicant: BASF SE

    Abstract: Process for the recovery of transition metal from spent lithium ion batteries containing nickel, wherein said process comprises the steps of (a) heating a lithium containing transition metal oxide material to a temperature in the range of from 200 to 900° C. in the presence of H2, (b) treatment of the product obtained in step (a) with an aqueous medium, (c) solid-solid separation for the removal of Ni from the solid residue of step (b), (d) recovery of Li as hydroxide or salt from the solution obtained in step (b), (e) extraction of Ni and, if applicable, Co from the solid Ni-concentrate obtained in step (c).

    Process for the generation of thin inorganic films

    公开(公告)号:US11180852B2

    公开(公告)日:2021-11-23

    申请号:US16322999

    申请日:2017-08-23

    Applicant: BASF SE

    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

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