公开(公告)号：US20250126776A1

公开(公告)日：2025-04-17

申请号：US18692472

申请日：2023-06-16

Applicant: BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY

Inventor： Libin Jia ,  Yanlei Ping ,  Chao Tian

IPC: H10B12/00 ,  H01L21/223 ,  H01L21/768 ,  H10D84/01

Abstract: Disclosed are a semiconductor device, a manufacturing method therefor, and an electronic equipment, the semiconductor device includes: at least one vertical channel transistor disposed on a base substrate, and a bit line; the transistor includes a semiconductor pillar extending along a direction perpendicular to the base substrate, the semiconductor pillar includes a channel region, and a first region and a second region respectively disposed on two sides of the channel region, the second region is disposed between the base substrate and the first region, the bit line is in contact with the second region, and a plasma dopant concentration of a contact surface between the second region and the bit line is greater than or equal to 1e14 atoms/square centimeter.