公开(公告)号：US20240290678A1

公开(公告)日：2024-08-29

申请号：US18705226

申请日：2023-06-07

Applicant: BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY

Inventor： Ming ZENG

IPC: H01L23/31 ,  H01L21/56

CPC classification number: H01L23/3178 ,  H01L21/56

Abstract: Provided is a semiconductor structure. The semiconductor structure includes a substrate including a die region and a non-die region, wherein an accommodation recess is formed in a side of the substrate and positioned in the non-die region; a buffer disposed in the accommodation recess; a functional film layer disposed on the side, where the accommodation recess is formed, of the substrate; and a passivation layer covering the functional film layer and the substrate. A buffer cavity with an opening facing away from the substrate is formed in the buffer. An orthographic projection of the functional film layer on the substrate is within the die region. A first through-via is formed in the passivation layer. An orthographic projection of the first through-via on the substrate is at least partially overlapped with an orthographic projection of the opening on the substrate. The opening is in communication with the first through-via.