公开(公告)号：US3457526A

公开(公告)日：1969-07-22

申请号：US3457526D

申请日：1965-05-11

Applicant: BELL TELEPHONE LABOR INC

Inventor： ORR WILLIAM H

IPC: H03B1/00 ,  H03B5/20 ,  H03H11/12 ,  H03J3/26

CPC classification number: H03B5/20 ,  H03B2201/01 ,  H03H11/1295

公开(公告)号：US3542654A

公开(公告)日：1970-11-24

申请号：US3542654D

申请日：1966-09-16

Applicant: BELL TELEPHONE LABOR INC

Inventor： ORR WILLIAM H

IPC: C25D11/32 ,  H01L49/02 ,  H05K1/16 ,  H05K3/02 ,  C23B5/48 ,  C23B9/00

CPC classification number: C25D11/32 ,  H01L49/02 ,  H05K1/167 ,  H05K3/02 ,  Y10T29/435 ,  Y10T29/49004 ,  Y10T29/49099 ,  Y10T29/49101

公开(公告)号：US3665346A

公开(公告)日：1972-05-23

申请号：US3665346D

申请日：1969-10-16

Applicant: BELL TELEPHONE LABOR INC

Inventor： ORR WILLIAM H

IPC: C25D11/32 ,  H01L27/01 ,  H05K1/16 ,  H05K3/02 ,  H03H7/10

CPC classification number: H01L27/016 ,  C25D11/32 ,  H05K1/167 ,  H05K3/02 ,  Y10T29/49124

Abstract: This disclosure describes a thin film distributed RC circuit component consisting of an inert substrate, an anodizable resistive film, an oxide dielectric layer produced upon the film and a conductive counterelectrode deposited on the dielectric layer. The resistive film is a suitable refractory metal. A pattern of spaced apertures are etched through the conductive counterelectrode to but not beyond the underlying oxide layer. The apertures must be sufficiently large to pass an anodizing solution. By selecting the thickness and resistor pattern of the anodizable film, as well as the size and spacing of the apertures, the resulting component is readily adjusted as to frequency response or other characteristics.

公开(公告)号：US3607679A

公开(公告)日：1971-09-21

申请号：US3607679D

申请日：1969-05-05

Applicant: BELL TELEPHONE LABOR INC

Inventor： MELROY DAVID O ,  ORR WILLIAM H ,  PELLETIER FRANK P ,  YOCOM WILLIS H

IPC: H01C17/12 ,  H01G4/40 ,  H01L49/02 ,  C23B5/48 ,  C23C15/00 ,  C23F17/00

CPC classification number: H01G4/40 ,  H01C17/12 ,  H01L49/02 ,  Y10S428/938 ,  Y10T29/49099 ,  Y10T428/12819 ,  Y10T428/12944

Abstract: A technique for the fabrication of tantalum-based resistors and capacitors on a single substrate involves a series of process steps wherein an anodic tantalum oxide film initially formed on areas destined for use as either resistors or capacitors serves as an etch stop when removing subsequently deposited tantalum components therefrom.