公开(公告)号：AT488038T

公开(公告)日：2010-11-15

申请号：AT05744345

申请日：2005-04-14

Applicant: BINOPTICS CORP

Inventor： BEHFAR ALEX ,  GREEN MALCOLM ,  SCHREMER ALFRED

IPC: H01S5/026 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02F1/017 ,  H01S5/00 ,  H01S5/028 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/22 ,  H01S5/343

Abstract: A laser and electroabsorption modulator (EAM) are monolithically integrated through an etched facet process. Epitaxial layers on a wafer include a first layer for a laser structure and a second layer for an EAM structure. Strong optical coupling between the laser and the EAM is realized by using two 45-degree turning mirrors to route light vertically from the laser waveguide to the EAM waveguide. A directional angled etch process is used to form the two angled facets.