公开(公告)号：EP1673801A4

公开(公告)日：2010-04-07

申请号：EP04795633

申请日：2004-10-15

Applicant: BREWER SCIENCE INC

Inventor： BHAVE MANDAR ,  WASHBURN CARLTON A ,  PULIGADDA RAMA ,  EDWARDS KEVIN

IPC: H01L21/768 ,  G03F7/09 ,  H01L20060101 ,  H01L21/312 ,  H01L21/4763

CPC classification number: G03F7/091 ,  H01L21/312 ,  H01L21/76808

Abstract: Wet-recess (develop) gap-fill and bottom anti-reflective coatings based on a polyamic acid or polyester platform are provided. The polyamic acid platform allows imidization to form a polyimide when supplied with thermal energy. The gap-fill and bottom anti-reflective coatings are soluble in standard aqueous developers, and are useful for patterning via holes and trenches on semiconductor substrates in a dual damascene patterning scheme. In one embodiment, compositions composed of polyamic acids can be used as gap-filling (via-filling) materials having no anti-reflective function in a copper dual damascene process to improve iso-dense fill bias across different via arrays. In another embodiment, the same composition can be used for anti-reflective purposes, wherein the photoresist can be directly coated over the recessed surface, while it also acts as a fill material to planarize via holes on the substrate. The compositions described here are particularly suitable for use at exposure wavelengths of less than about 370 nm.