公开(公告)号：EP2421048A4

公开(公告)日：2012-08-29

申请号：EP10764534

申请日：2010-04-16

Applicant: BRIDGESTONE CORP

Inventor： SHIINO OSAMU ,  SUGIE KAORU ,  IWABUCHI YOSHINORI

IPC: H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  H01L21/02 ,  H01L21/336 ,  H01L21/363 ,  H01L29/66

CPC classification number: C23C14/086 ,  C23C14/3414 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/78693

公开(公告)号：JP2012074622A

公开(公告)日：2012-04-12

申请号：JP2010219832

申请日：2010-09-29

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： SHIINO OSAMU ,  SUGIE KAORU ,  MURAYAMA KENJI

IPC: H01L21/203 ,  G02F1/167 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a deposition method of an amorphous oxide semiconductor in which the amorphousness or the planarity of a film can be enhanced even when an amorphous oxide semiconductor consisting of InGaZnO, InWO, or the like, is formed by sputtering.SOLUTION: When an amorphous oxide semiconductor is formed on a substrate by sputtering, deposition is carried out while cooling the substrate. The cooling temperature of the substrate during deposition is preferably set in the range from -120°C to -20°C. Furthermore, InGaZnO, InWO, InWZnO or InWSnO is preferable as the amorphous oxide semiconductor to be deposited.

Abstract translation: 要解决的问题：为了提供一种非晶氧化物半导体的沉积方法，其中即使当由InGaZnO，InWO等构成的非晶氧化物半导体也可以通过以下方式形成时，其非晶性或平面性可以提高： 溅射。 解决方案：当通过溅射在衬底上形成非晶氧化物半导体时，在冷却衬底的同时进行沉积。 沉积时的基板的冷却温度优选设定在-120℃〜-20℃的范围内。 此外，优选InGaZnO，InWO，InWZnO或InWSnO作为要沉积的无定形氧化物半导体。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010278336A

公开(公告)日：2010-12-09

申请号：JP2009130965

申请日：2009-05-29

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： SHIINO OSAMU ,  SUGIE KAORU ,  IWABUCHI YOSHINORI

IPC: H01L29/786 ,  H01L51/05

Abstract: PROBLEM TO BE SOLVED: To construct a bipolar thin film transistor having high performance and high reliability, which is capable of performing n-type and p-type bipolar operations. SOLUTION: The bipolar thin film transistor is a thin film transistor, which includes: three electrodes of a source electrode, a drain electrode and a gate electrode; and respective elements of a channel layer and a gate insulating film. The channel layer is a laminate of an organic film and a metal-oxide film which contains indium, which is doped with at least one of tungsten, tin and titanium, and the electro-resistivity of which is controlled beforehand. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：构造能够执行n型和p型双极性操作的具有高性能和高可靠性的双极薄膜晶体管。 解决方案：双极薄膜晶体管是薄膜晶体管，其包括：源电极，漏电极和栅电极的三个电极; 以及沟道层和栅极绝缘膜的各个元件。 沟道层是包含铟的有机膜和金属氧化物膜的层叠体，铟被掺杂有钨，锡和钛中的至少一种，并且其电阻率被预先控制。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010229523A

公开(公告)日：2010-10-14

申请号：JP2009080262

申请日：2009-03-27

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： IWABUCHI YOSHINORI ,  SUGIE KAORU ,  SHIINO OSAMU ,  KOTSUBO HIDESHI ,  SHIGESATO YUZO ,  MUTO YU

IPC: C23C14/34 ,  C23C14/08 ,  H01B5/14 ,  H01B13/00

Abstract: PROBLEM TO BE SOLVED: To provide a conductive transparent compound thin film which has a sufficiently low resistivity and is difficult to provide in the conventional reactive sputtering method, and to provide a method of producing the conductive transparent compound thin film.
SOLUTION: In the method of depositing the conductive transparent compound thin film made of metal oxide by means of a reactive sputtering method of performing sputtering by using a metal target in an environment containing oxygen, wherein impedance or emission intensity of discharge upon sputtering is monitored, an inlet oxygen flow rate is controlled based on the result of the monitoring, the conductive transparent compound thin film is deposited in a transition region by feedback control and, therein, the substrate is heated.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有足够低电阻率并且难以在常规的反应溅射法中提供的导电透明化合物薄膜，并提供制备导电透明化合物薄膜的方法。 解决方案：在通过在包含氧的环境中使用金属靶进行溅射的反应溅射法沉积由金属氧化物制成的导电透明化合物薄膜的方法中，其中溅射时的放电的阻抗或发射强度 基于监测结果控制入口氧气流速，通过反馈控制将导电透明化合物薄膜沉积在过渡区域中，并且其中衬底被加热。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2013103412A

公开(公告)日：2013-05-30

申请号：JP2011249033

申请日：2011-11-14

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： TANAKA TAKASHI ,  KITANO HIDEKI ,  AMAMOTO TETSUO ,  SUGIE KAORU

IPC: B29D30/30

Abstract: PROBLEM TO BE SOLVED: To provide a high-productive manufacturing method of a metal film and a pneumatic tire having the metal film.SOLUTION: The invention relates to: the method for manufacturing the metal film of the pneumatic tire having the metal film as inner liner, and forming the metal film by sputtering; and the method for manufacturing the pneumatic tire having the metal film as the inner liner. The method for manufacturing the pneumatic tire includes a step of manufacturing the metal film by the method for manufacturing the metal film, wherein the sputtering is performed before and after tire molding, or after tire vulcanization.

Abstract translation: 要解决的问题：提供具有金属膜的金属膜和充气轮胎的高生产率制造方法。 解决方案：本发明涉及：具有金属膜作为内衬的充气轮胎的金属膜的制造方法，通过溅射形成金属膜; 以及具有金属膜作为内衬的充气轮胎的制造方法。 用于制造充气轮胎的方法包括通过金属膜的制造方法制造金属膜的步骤，其中在轮胎成型之前或之后进行溅射，或者在轮胎硫化之后进行溅射。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010251604A

公开(公告)日：2010-11-04

申请号：JP2009101005

申请日：2009-04-17

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： SHIINO OSAMU ,  SUGIE KAORU ,  IWABUCHI YOSHINORI

IPC: H01L21/336 ,  C23C14/08 ,  C23C14/58 ,  H01L21/363 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor, capable of obtaining an indium-containing metal oxide having stable characteristics by a comparatively easy control while maintaining the characteristics such that it can be formed by a non-heating sputter depositing method and includes both high mobility and high amorphous performance, and obtaining a TFT element having stable characteristics.
SOLUTION: The method is provided for manufacturing the thin film transistor, and includes the steps of forming the metal oxide film 2 by performing the sputtering without heating a substrate 1, and forming constituents such as a channel layer 3, a source electrode 4, a drain electrode 5 and a gate electrode 1 on the substrate followed by applying heat treatment.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决的问题：提供一种制造薄膜晶体管的方法，其能够通过相对容易的控制获得具有稳定特性的含铟金属氧化物，同时保持其可由非 - 加热溅射沉积方法，并且包括高迁移率和高无定形性能，并且获得具有稳定特性的TFT元件。 解决方案：该方法用于制造薄膜晶体管，并且包括以下步骤：通过在不加热基板1的情况下进行溅射来形成金属氧化物膜2，并且形成诸如沟道层3，源电极 4，漏电极5和栅电极1，然后进行热处理。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009037056A

公开(公告)日：2009-02-19

申请号：JP2007201999

申请日：2007-08-02

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： SUGIE KAORU ,  IWABUCHI YOSHINORI ,  YOSHIKAWA MASAHITO ,  ANZAI HIROYUKI ,  SEKI WATARU ,  SAKAI YOSHIKATSU

IPC: G02F1/167 ,  G02F1/17

Abstract: PROBLEM TO BE SOLVED: To provide an information display panel capable of making the thickness of an insulation oxide film preferably as thick as 5 μm or more, effectively suppressing image force acting on a particle, thereby reducing a driving voltage of the particle.
SOLUTION: The information display panel displays information or the like by enclosing display medium between two sheets of substrates 1, 2 of which at least one side is transparent, applying a voltage between electrodes 5, 6 disposed on the substrates, providing an electric field to the display medium 3 and, thereby, moving the display medium, wherein the insulation oxide films 11, 12 comprising silicon oxide or zirconium oxide film formed by sputtering are formed on the surface of an electrode made of metal oxide of the electrodes.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供能够使绝缘氧化物膜的厚度优选为5μm以上的信息显示面板，能够有效地抑制作用在粒子上的图像力，从而降低粒子的驱动电压 。 解决方案：信息显示面板通过将显示介质封闭在两片基板1,2之间来显示信息等，其中至少一侧是透明的，在布置在基板上的电极5,6之间施加电压，从而提供 并且由此移动显示介质，其中通过溅射形成的包括氧化硅或氧化锆膜的绝缘氧化物膜11,12形成在由电极的金属氧化物制成的电极的表面上。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2011237485A

公开(公告)日：2011-11-24

申请号：JP2010106532

申请日：2010-05-06

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： SUGIE KAORU ,  SUZUKI TAKAHIRO ,  KOTSUBO HIDESHI ,  MURAYAMA KENJI

IPC: G02F1/167

CPC classification number: G02F1/167 ,  G02F2001/1672

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a panel for information display capable of solving the problem of the positional misalignment between a pixel electrode and a barrier wall and reducing a manufacturing cost by reducing the number of manufacturing processes.SOLUTION: The manufacturing method of the active drive type panel for information display using a thin film transistor (TFT) includes: a protection film and a barrier wall forming process for forming the protection film and the barrier wall having a through-hole integrally on a rear substrate by applying a resin material for the protection film of the TFT on the rear substrate provided with the TFT, pressing a stamper on the applied resin material, and irradiating heat or an ultraviolet light on the resin material via the stamper so as to harden the resin material; a pixel electrode forming process for forming a pixel electrode by printing a conductive material on the protection film between barrier walls and the through-hole; and a sticking process for sticking a front substrate and the rear substrate by joining the front substrate provided with a common electrode and the barrier wall after a display medium is filled in a cell.

Abstract translation: 解决问题的方案：提供能够解决像素电极和阻挡壁之间的位置偏移的问题的用于信息显示的面板的制造方法，并且通过减少制造工艺的数量来降低制造成本。 解决方案：使用薄膜晶体管（TFT）的用于信息显示的有源驱动型面板的制造方法包括：保护膜和用于形成保护膜的阻挡壁形成工艺和具有通孔的阻挡壁 通过在设置有TFT的后基板上施加用于TFT的保护膜的树脂材料，在施加的树脂材料上按压压模，并且经由压模将热或紫外线照射在树脂材料上，整体地在后基板上 硬化树脂材料; 用于通过在阻挡壁和通孔之间的保护膜上印刷导电材料来形成像素电极的像素电极形成工艺; 以及在将显示介质填充到单元中之后，通过连接设置有公共电极的前基板和阻挡壁来粘贴前基板和后基板的粘贴工艺。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010258126A

公开(公告)日：2010-11-11

申请号：JP2009104736

申请日：2009-04-23

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： SUGIE KAORU ,  SHIINO OSAMU ,  KOTSUBO HIDESHI ,  MURAYAMA KENJI

IPC: H01L29/786 ,  H01L21/363

Abstract: PROBLEM TO BE SOLVED: To provide a high performance thin-film transistor combining a channel layer formed by an oxide semiconductor, and an organic gate insulating film which is easily formed by coating, and expresses high withstand voltage, without causing problems of productivity and semiconductor performances. SOLUTION: A thin-film transistor is provided with: a source electrode 5; a drain electrode 6; a gate electrode 2; a channel layer 4; and a gate insulating layer 3. The channel layer 4 is formed by an oxide semiconductor, a gate insulating layer 3 comprises an organic insulating film, and an oxide semiconductor layer 7 comprising the same material as that of the channel layer 4 and having a carrier density lower than that of the channel layer 4 is formed between the channel layer 4 and the gate insulating layer 3. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供组合由氧化物半导体形成的沟道层的高性能薄膜晶体管和通过涂覆容易形成并表现出高耐压的有机栅极绝缘膜，而不引起问题 生产率和半导体性能。 解决方案：薄膜晶体管设有：源电极5; 漏电极6; 栅电极2; 沟道层4; 沟道层4由氧化物半导体形成，栅极绝缘层3包括有机绝缘膜，以及氧化物半导体层7，其包含与沟道层4相同的材料，并具有载体 在沟道层4和栅极绝缘层3之间形成密度低于沟道层4的密度。（C）2011，JPO＆INPIT

公开(公告)号：JP2010191125A

公开(公告)日：2010-09-02

申请号：JP2009034746

申请日：2009-02-18

Applicant: Bridgestone Corp ,  株式会社ブリヂストン

Inventor： IWABUCHI YOSHINORI ,  TAKENOUCHI HIDEAKI ,  SUGIE KAORU

IPC: G02F1/167 ,  G02F1/17

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a pattern electrode for an information display panel by which the pattern electrode is easily and inexpensively formed on a substrate.
SOLUTION: The method for manufacturing the pattern electrode for the information display panel includes a step of forming the pattern electrode on the substrate by printing a conductive ink in a pattern on the substrate and burning the conductive ink.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于制造信息显示面板的图案电极的方法，通过该方法，图案电极容易且廉价地形成在基板上。 解决方案：用于制造用于信息显示面板的图案电极的方法包括通过以基板上的图案印刷导电油墨并对导电油墨进行燃烧来在基板上形成图案电极的步骤。 版权所有（C）2010，JPO＆INPIT