公开(公告)号：EP2909863A1

公开(公告)日：2015-08-26

申请号：EP13846925.9

申请日：2013-10-15

Applicant: BYD Company Circuit

Inventor： ZHANG, Caiting ,  LIU, Kun ,  FU, Jingjun ,  HU, Wenge

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14698 ,  H04N5/378

Abstract: A pixel cell, a method for manufacturing the same and an image sensor including the same are provided. The pixel cell includes: a substrate; a photodiode, a pass transistor and a floating diffusion structure respectively formed on the substrate, in which the pass transistor is formed between the photodiode and the floating diffusion structure; and a PINNED structure, formed on the substrate and connected with the floating diffusion structure, in which a reset voltage of the floating diffusion structure is higher than a depletion voltage of the PINNED structure.