Tunneling-enhanced floating gate semiconductor device
    1.
    发明申请
    Tunneling-enhanced floating gate semiconductor device 审中-公开
    隧道增强浮栅半导体器件

    公开(公告)号:US20060220096A1

    公开(公告)日:2006-10-05

    申请号:US11133718

    申请日:2005-05-19

    Applicant: Bin Wang Yanjun Ma

    Inventor: Bin Wang Yanjun Ma

    Abstract: Tunneling-enhanced, floating gate semiconductor devices and methods for forming such devices are described. In one embodiment, a p-n junction device is formed with a floating gate that is partially doped with n- and p-type impurities. Two regions on either side of an n+ doped region in the floating gate and a surface region on a substrate are implanted with the impurities based on a number of predetermined configurations. In another embodiment, a transistor type semiconductor device is configured with implanted impurities in two regions of its floating gate as well as two surface regions in its substrate. Enhanced tunneling junction enables use of lower tunneling voltages in applications such as programming NVM cells.

    Abstract translation: 描述了隧道增强型浮栅半导体器件及其形成方法。 在一个实施例中,p-n结器件形成有部分掺杂有n型和p型杂质的浮栅。 基于多个预定配置,在浮置栅极中的n +掺杂区域的任一侧上的两个区域和衬底上的表面区域注入杂质。 在另一个实施例中,晶体管型半导体器件被配置为在其浮动栅极的两个区域中具有注入的杂质以及其衬底中的两个表面区域。 增强的隧道结使得能够在诸如编程NVM单元之类的应用中使用较低的隧道电压。

    Magnet
    2.
    外观设计
    Magnet 有权

    公开(公告)号:USD1039353S1

    公开(公告)日:2024-08-20

    申请号:US29782500

    申请日:2021-05-07

    Applicant: Yang He Bin Wang

    Designer: Yang He Bin Wang

    Abstract: FIG. 1 is a perspective view of a magnet showing our new design;
    FIG. 2 is a front elevation view thereof;
    FIG. 3 is a rear elevation view thereof;
    FIG. 4 is a left side elevation view thereof;
    FIG. 5 is a right side elevation view thereof;
    FIG. 6 is a top plan view thereof; and,
    FIG. 7 is a bottom plan view thereof.
    The broken line showing of a magnet is for the purpose of illustrating portions of the article and forms no part of the claimed design.

    Hair clipper
    3.
    外观设计

    公开(公告)号:USD972780S1

    公开(公告)日:2022-12-13

    申请号:US29828970

    申请日:2022-03-02

    Applicant: Bin Wang

    Designer: Bin Wang

    Hair trimmer
    4.
    外观设计

    公开(公告)号:USD972779S1

    公开(公告)日:2022-12-13

    申请号:US29828969

    申请日:2022-03-02

    Applicant: Bin Wang

    Designer: Bin Wang

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