公开(公告)号：WO2017055806A1

公开(公告)日：2017-04-06

申请号：PCT/GB2016/052921

申请日：2016-09-19

Applicant: CAMBRIDGE CMOS SENSORS LIMITED

Inventor： ALI, Syed Zeeshan ,  GOVETT, Matthew ,  STACEY, Simon Jonathan

IPC: G01N27/414 ,  G01N27/12 ,  G01N27/22

CPC classification number: G01N27/128 ,  B81B2201/02 ,  G01N27/22 ,  G01N27/414

Abstract: Disclosed herein is a gas sensing device comprising a dielectric membrane formed on a semiconductor substrate comprising a bulk-etched cavity portion, a heater located within or over the dielectric membrane, a material for sensing a gas which is located on one side of the membrane, a support structure located near the material, and a gas permeable region coupled to the support structure so as to protect the material.

Abstract translation: 本文公开了一种气体感测装置，其包括形成在半导体衬底上的电介质膜，该电介质膜包括体蚀刻的空腔部分，位于电介质膜内或之上的加热器，用于感测位于膜的一侧上的气体的材料， 位于材料附近的支撑结构，以及连接到支撑结构以便保护材料的气体可渗透区域。