FIELD EMITTER FABRICATION USING MEGASONIC ASSISTED LIFT-OFF
    1.
    发明公开
    FIELD EMITTER FABRICATION USING MEGASONIC ASSISTED LIFT-OFF 失效
    制造场发射装置BY MEGA SOUND支持的分离

    公开(公告)号:EP1019937A4

    公开(公告)日:2005-05-04

    申请号:EP98906245

    申请日:1998-02-11

    Inventor: WILLIAMS DALE A

    CPC classification number: H01J9/025

    Abstract: A method for removing a lift-off layer (214) and an overlying closure layer (218) formed during manufacture of a field emitter structure having at least one emitter (220) on a substrate (202) comprising: a) immersing the field emitter structure in an etchant which attacks the lift-off layer (214) and b) activating a vibrational transducer (410) immersed in the etchant to subject the lift-off and closure layers to vibrational forces which aid in removing these layers (214, 218) from the emitter structure (210, 206, 220). The transducer (410) is preferably a megasonic transducer. After rinsing etchant from the emitter structure, the emitter structure may be dried using an alcohol-based fluid displacement drying process.

Patent Agency Ranking