公开(公告)号：WO1997046739A1

公开(公告)日：1997-12-11

申请号：PCT/US1997009197

申请日：1997-06-05

Applicant: CANDESCENT TECHNOLOGIES CORPORATION

Inventor： CANDESCENT TECHNOLOGIES CORPORATION ,  HAVEN, Duane, A. ,  SLUZKY, Esther ,  MACAULAY, John, M.

IPC: C25D13/02

CPC classification number: H01J9/025

Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a partially finished electron-emitting device. The solid layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.

Abstract translation: 用于产生开口（38或54）延伸的固体层（36A或52A）的方法需要使悬浮在流体（26）中的颗粒（30）至电场（EA）使许多颗粒移动 朝向和积聚，放置在流体中的结构。 从流体中除去包括如此累积的颗粒的结构。 至少在所累积的颗粒之间的空间中，在该结构上沉积固体材料。 包括任何上覆材料（36B或52B）的颗粒被去除。 剩余的固体材料形成固体层，开孔在这样去除的颗粒的位置处延伸穿过该固体层。 该结构通常是部分完成的电子发射器件。 然后，固体层通常是用于电子发射器件的栅极层或用于形成栅极层的层。

公开(公告)号：EP0909347A1

公开(公告)日：1999-04-21

申请号：EP97927841.0

申请日：1997-06-05

Applicant: Candescent Technologies Corporation

Inventor： HAVEN, Duane, A. ,  SLUZKY, Esther ,  MACAULAY, John, M.

IPC: C25D13 ,  H01J9

CPC classification number: H01J9/025

Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a partially finished electron-emitting device. The solid layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.