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公开(公告)号：WO2008156187A3
公开(公告)日：2009-08-06
申请号：PCT/JP2008061381
申请日：2008-06-17
Applicant: CANON KK , UEDA MIKI , IKEDA TAKASHI
Inventor： UEDA MIKI , IKEDA TAKASHI
IPC: G01R33/02
CPC classification number: G01R33/18 , G01R33/0206 , G01R33/063
Abstract: A magneto-impedance element used for detection of a magnetic substance has a structure that can trap magnetic substances locally in a predetermined band-like region on the lateral surface thereof or a structure that can detect the presence of a magnetic substance based on a change of the impedance in response to application of magnetic fields. The magneto-impedance element is used to provide a detection apparatus and a detection method that can easily detect a magnetic substance with high precision.
Abstract translation: 用于检测磁性物质的磁阻元件具有能够将磁性物质局部地捕获在其侧面上的预定带状区域中的结构或者可以基于变化来检测磁性物质的存在的结构 响应于磁场的阻抗。 磁阻元件用于提供可以容易地以高精度检测磁性物质的检测装置和检测方法。
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公开(公告)号：DE60223440T2
公开(公告)日：2008-09-04
申请号：DE60223440
申请日：2002-04-02
Applicant: CANON KK
Inventor： IKEDA TAKASHI , KOGANEI AKIO , OKANO KAZUHISA
Abstract: A magnetoresistive film includes a nonmagnetic film, and a structure in which magnetic films are formed on the two sides of the nonmagnetic film. At least one of the magnetic films is a perpendicular magnetization film. A magnetic film whose easy axis of magnetization is inclined from a direction perpendicular to the film surface is formed at a position where the magnetic film contacts the perpendicular magnetization film but does not contact the nonmagnetic film. A memory, magnetic element, magnetoresistive element, and magnetic element manufacturing method are also disclosed.
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公开(公告)号：DE60216838T2
公开(公告)日：2007-09-06
申请号：DE60216838
申请日：2002-03-18
Applicant: CANON KK
Inventor： NISHIMURA NAOKI , IKEDA TAKASHI
Abstract: A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed.
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公开(公告)号：DE60216838D1
公开(公告)日：2007-02-01
申请号：DE60216838
申请日：2002-03-18
Applicant: CANON KK
Inventor： NISHIMURA NAOKI , IKEDA TAKASHI
Abstract: A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed.
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Patent Agency Ranking
公开(公告)号：DE60207006D1
公开(公告)日：2005-12-08
申请号：DE60207006
申请日：2002-06-06
Applicant: CANON KK
Inventor： IKEDA TAKASHI
IPC: G11B5/39 , G11C11/15 , H01F10/16 , H01F10/187 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/16
Abstract: The magneto-resistance effect film of the present invention comprises a first magnetic layer (111) consisting of a perpendicularly magnetized film, a second magnetic layer (113) consisting of a perpendicularly magnetized film stacked above said first magnetic layer, and a non-magnetic layer (112) sandwiched between said first and second magnetic layers, wherein there is provided a first magnetic region (114) formed in granular shape between one of said first and second magnetic layers and the non-magnetic layer and having a spin polarization greater than that of the one of the first and second magnetic layers and wherein the first magnetic region is arranged to be exchange-coupled with the one of said first and second magnetic layers.
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公开(公告)号：AT524730T
公开(公告)日：2011-09-15
申请号：AT08778195
申请日：2008-07-09
Applicant: CANON KK
Inventor： UEDA MIKI , IKEDA TAKASHI
IPC: G01N27/72 , G01N33/543 , G01R33/04
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公开(公告)号：DE60207006T2
公开(公告)日：2006-07-13
申请号：DE60207006
申请日：2002-06-06
Applicant: CANON KK
Inventor： IKEDA TAKASHI
IPC: G11B5/39 , G11C11/15 , G11C11/16 , H01F10/16 , H01F10/187 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
Abstract: The magneto-resistance effect film of the present invention comprises a first magnetic layer (111) consisting of a perpendicularly magnetized film, a second magnetic layer (113) consisting of a perpendicularly magnetized film stacked above said first magnetic layer, and a non-magnetic layer (112) sandwiched between said first and second magnetic layers, wherein there is provided a first magnetic region (114) formed in granular shape between one of said first and second magnetic layers and the non-magnetic layer and having a spin polarization greater than that of the one of the first and second magnetic layers and wherein the first magnetic region is arranged to be exchange-coupled with the one of said first and second magnetic layers.
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公开(公告)号：DE60223440D1
公开(公告)日：2007-12-27
申请号：DE60223440
申请日：2002-04-02
Applicant: CANON KK
Inventor： IKEDA TAKASHI , KOGANEI AKIO , OKANO KAZUHISA
Abstract: A magnetoresistive film includes a nonmagnetic film, and a structure in which magnetic films are formed on the two sides of the nonmagnetic film. At least one of the magnetic films is a perpendicular magnetization film. A magnetic film whose easy axis of magnetization is inclined from a direction perpendicular to the film surface is formed at a position where the magnetic film contacts the perpendicular magnetization film but does not contact the nonmagnetic film. A memory, magnetic element, magnetoresistive element, and magnetic element manufacturing method are also disclosed.
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公开(公告)号：JP2003197872A
公开(公告)日：2003-07-11
申请号：JP2001394551
申请日：2001-12-26
Applicant: CANON KK
Inventor： IKEDA TAKASHI
IPC: G11C11/14 , G11C11/15 , H01F10/14 , H01L21/8246 , H01L27/105 , H01L43/08
Abstract: PROBLEM TO BE SOLVED: To provide a memory which has a large readout signal and high recording density. SOLUTION: One bit is recorded to two magneto-resistance effect film which are stacked so that one is a magnetism array with large resistance and the other is a magnetism array with small resistance. Here, a magnetic body is a vertically magnetized film. The two magneto-resistance effect films can share recording wires. Magnetism fixed layers 011 and 014 are reversely parallel, so the resistance is large when the magnetization directions of magnetism free layers 012 and 015 are reversely parallel with the direction of a storage magnetic field and small when parallel. COPYRIGHT: (C)2003,JPO
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