公开(公告)号：DE602008005223D1

公开(公告)日：2011-04-14

申请号：DE602008005223

申请日：2008-09-02

Applicant: CANON KK

Inventor： KAWASHIMA MIYOKO

IPC: G03F1/36 ,  G03F1/68

公开(公告)号：DE69936687T2

公开(公告)日：2008-04-30

申请号：DE69936687

申请日：1999-06-29

Applicant: CANON KK

Inventor： SUGITA MITSURO ,  KAWASHIMA MIYOKO

IPC: G03F7/20

Abstract: An exposure method and apparatus wherein one and the same mask pattern is projected onto a common exposure region through illumination while changing an illumination condition and a spatial frequency passage spectrum of a projection optical system, by which multiple exposure is accomplished without replacement of the mask by another.

公开(公告)号：DE10325308A1

公开(公告)日：2004-01-22

申请号：DE10325308

申请日：2003-06-04

Applicant: CANON KK

Inventor： KAWASHIMA MIYOKO

IPC: G03F1/36 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027

公开(公告)号：DE69936687D1

公开(公告)日：2007-09-13

申请号：DE69936687

申请日：1999-06-29

Applicant: CANON KK

Inventor： SUGITA MITSURO ,  KAWASHIMA MIYOKO

IPC: G03F7/20

Abstract: An exposure method and apparatus wherein one and the same mask pattern is projected onto a common exposure region through illumination while changing an illumination condition and a spatial frequency passage spectrum of a projection optical system, by which multiple exposure is accomplished without replacement of the mask by another.

公开(公告)号：JP2000150376A

公开(公告)日：2000-05-30

申请号：JP2000003584

申请日：2000-01-12

Applicant: CANON KK

Inventor： KAWASHIMA MIYOKO ,  SAITO KENJI ,  SUGITA MITSUO ,  SUZUKI AKIYOSHI ,  IWASAKI YUICHI

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/22

Abstract: PROBLEM TO BE SOLVED: To improve the contrast of the exposure value distribution related to a pattern having a low image contrast of the patterns of a mask, by exposing the image forming position of the pattern having the low image contrast by using an image having a higher contrast than the low-contrast pattern. SOLUTION: The lithography pattern corresponding to a desired circuit pattern having an arbitrary shape is finally formed by uniting the exposure pattern by means of a cyclic pattern image containing such a fine high-contrast pattern that seems to disappear at first sight when only cyclic pattern exposure (S1) is made with an exposure pattern by means of a circuit pattern image containing a pattern of a size smaller than the resolution of an aligner and having an arbitrary shape through multiplexed exposure. The point at issue which is raised at the time of uniting the patterns with each other is the pattern having the minimum line width of the circuit pattern and to nicely superimpose a high-contrast image upon the image of such a pattern that is not able to obtain the exposure value distribution of a desired contrast by that much exposure.

公开(公告)号：JP2001244190A

公开(公告)日：2001-09-07

申请号：JP2000057505

申请日：2000-03-02

Applicant: CANON KK

Inventor： OSAKI YUMIKO ,  KAWASHIMA MIYOKO

IPC: G03F1/70 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a mask, which is capable of making the optimal exposures of patterns coincide with each other, a line width change in the patterns uniform to exposure, and a range of exposure common to the patterns wide, an exposure method by the use of the same, an aligner, and a method of manufacturing device. SOLUTION: A first pattern comprising cyclic patterns and a second pattern comprising fine line groups which are equal to each other in line width but different from each other in line pitch are subjected to an-exposure operation using a first pattern mask in a multi-exposure process, wherein the first pattern forms a mask, having cyclic patterns that are equal to each other in the ratio of a line width to a line pitch and overlap each other with one of the above fine line groups.

公开(公告)号：JP2000310843A

公开(公告)日：2000-11-07

申请号：JP11982799

申请日：1999-04-27

Applicant: CANON KK

Inventor： KAWASHIMA MIYOKO

IPC: G03F1/00 ,  G03F1/68 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To make it possible to optimize an effective light source and to improve both of a contrast and depth by irradiating fine grid-like patterns having a specific pitch with light forming the effective light source of a rectangular annular shape constituting a region intersecting with the pupil. SOLUTION: When a contact hole array is irradiated with the rectangular annular effective light source, a pair of zero order light and first order light is made incident on a position symmetrical with respect to the Kx and Ky axes on the pupil. In such a case, there is no degradation in the contrast by defocusing. The pitch turns to s1=1/(4k1) with respect to the two-dimensional periodic contact hole array of 2k1(λ/NA) and s2 is determined according to contrast defocusing characteristics. Namely, s2 is determined by the required contrast at the required depth. The contrast defocusing characteristics which are nearly the same as quadrupole illumination consisting of a circular shape of the same radius as s2 are obtained and the ratio of the area occupying the pupil of the effective light source increases exceedingly. If s2=0.1 or below is attained, there is substantially no degradation in the contrast.

公开(公告)号：JP2000021753A

公开(公告)日：2000-01-21

申请号：JP20133398

申请日：1998-06-30

Applicant: CANON KK

Inventor： KAWASHIMA MIYOKO

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To produce high resolution by matching the direction in which the resolution of a projecting optical system is best with the direction of diffraction light emitted by a fine pattern on the surface of a first body. SOLUTION: A resolution determined by measurements is best in a direction Xa at an angle θ in the counterclockwise direction with respect to a standard direction SD. The direction Xa is a direction in which RMS(root mean square) of resolutions (aberrations) calculated in all directions from the standard direction SD is minimum. Next, a mask is turned counterclockwise an angle of θ' from the standard direction SD in such a way that the direction of diffraction light emitted by a fine pattern on the mask (first body) agrees with the Xa direction and a wafer is then turned counterclockwise an angle of (θ-θ') from the standard direction SD to match the Xa direction of the mask with the baking direction Xb of the wafer.

公开(公告)号：JP2000349011A

公开(公告)日：2000-12-15

申请号：JP15785499

申请日：1999-06-04

Applicant: CANON KK

Inventor： OSAKI YUMIKO ,  KAWASHIMA MIYOKO

IPC: H01L21/027 ,  G03F1/30 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To improve an obtained pattern in the multiple exposure operation of a pattern compring a periodic structure and an ordinary exposure pattern by forming a region in which the correction of a pattern strain due to an optical proximity effect of a second pattern is executed to a first pattern comprising a periodic structure used to resolve a fine line. SOLUTION: A region in which the correction of a pattern strain due to an optical proximity effect in the exposure operation of a second pattern is executed to a first pattern comprising a periodic pattern used to resolve a fine line is formed. That is to say, a periodic pattern region which is overlapped with the fine line in a direction at right angles to a period is shielded by Cr so as to become an isolated line for a light shielding operation. When a periodic pattern in which the isolated line is made thick is used, the line width of a pattern comprising the periodic structure is made equal to the line width of the isolated line. The line width of the isolated line is changed by the line width of a fine line which is to be created finally. When the isolated line is plated in the region of the periodic pattern overlapped with the fine line, the line width of the isolated line is made a little thickner than the line width of the fine line, and an optical proximity effect is corrected.

公开(公告)号：JP2000040656A

公开(公告)日：2000-02-08

申请号：JP22109798

申请日：1998-07-21

Applicant: CANON KK

Inventor： SUGITA MITSUO ,  KAWASHIMA MIYOKO ,  SAITO KENJI ,  SUZUKI AKIYOSHI

IPC: G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To form a circuit pattern in a complex shape on a wafer, by a method wherein a mask for transferring a specific pattern on a sensing substrate by multiple exposure is composed so that the permeability or/and phase may be diced. SOLUTION: In this mask pattern 81, one set or two sets of dual beam interference are simultaneously performed in the mutually perpendicular directions so as to form a diced pattern by one time projection exposure on a sensing substrate 86. Next, multiple exposure of this diced pattern (minute pattern) and a circuit pattern (ordinary pattern) is performed so as to form an arbitrary pattern by pertinently setting up a threshold value of the sensing substrate 86. At this time, the sensing substrate 86 is exposed in multiple times in mutually different patterns neither performing the multiple exposure step nor developing step at all. For example, in the case of dual beam interference exposure in one direction, both of element side exposure beams 82 and image side exposure beams 85 are composed of two parallel beams. Furthermore, the two beams interference is performed even in the orthogonal direction to a paper surface.