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1.发明授权公开(公告)号：US6424418B2
公开(公告)日：2002-07-23
申请号：US31876199
申请日：1999-05-26
Applicant: CANON KK
Inventor： KAWABATA YUJI , OKAMOTO TADASHI , SAKATA HAJIME , SAKURANAGA MASANORI , NOMOTO TSUYOSHI
IPC: G01N33/543 , G01N21/27 , G01N21/41 , G01N21/55
CPC classification number: G01N21/553
Abstract: A surface plasmon resonance sensor apparatus includes a common substrate, a surface emitting laser, such as a VCSEL, arranged on the common substrate, a sensor array, such as CCD array, arranged on the common substrate, a light-transmitting medium provided above the common substrate, and a metal thin film formed on the light-transmitting medium to cause surface plasmon resonance due to light which is emitted from the surface emitting laser, transmitted through the light-transmitting medium and impinging on the metal thin film. The surface emitting laser, metal thin film and sensor array are positioned such that a change in an intensity of light reflected by the metal thin film caused by the surface plasmon resonance can be measured by the sensor array.
Abstract translation: 表面等离子体共振传感器装置包括公共衬底，布置在公共衬底上的诸如VCSEL的表面发射激光器，布置在公共衬底上的诸如CCD阵列的传感器阵列，设置在公共衬底上的光传输介质 通常的基板和形成在透光介质上的金属薄膜，由于透射通过透光介质并撞击在金属薄膜上的从表面发射激光发射的光引起表面等离子体共振。 表面发射激光器，金属薄膜和传感器阵列的定位使得可以通过传感器阵列来测量由表面等离子体共振引起的由金属薄膜反射的光的强度的变化。
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公开(公告)号：DE69607493D1
公开(公告)日：2000-05-11
申请号：DE69607493
申请日：1996-01-03
Applicant: CANON KK
Inventor： SAKATA HAJIME
IPC: H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/34 , H01S5/06
Abstract: A semiconductor laser includes a semiconductor laser structure having an active layer (13, 155, 217, 353). The laser structure is designed such that light in both of two polarization modes can be excited therein. First and second reflectors (14, 106; 114, 206; 216; 316) are provided, and at least one of them is a distributed reflector (14, 114, 216, 316) which determines first and second reflection wavelengths for the two polarization modes. A coupling unit (17, 18, 19; 117, 151, 152; 214, 217; 314, 351, 352, 353) is provided for coupling the laser structure and the first and second reflectors for either of the light of the two polarization modes at first and second coupling wavelengths, which respectively coincide with the first and second reflection wavelengths. One of the light of the two polarization modes at the first and second reflection wavelengths is selectively propagated along a cavity comprised of the laser structure and the first and second reflectors by a control unit (104, 110; 204, 210; 304, 305; 404, 405). Thus, light oscillates in one of the two polarization modes at the first and second reflection wavelengths.
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公开(公告)号：DE69319468T2
公开(公告)日：1999-01-28
申请号：DE69319468
申请日：1993-02-04
Applicant: CANON KK
Inventor： OUCHI TOSHIHIKO , SAKATA HAJIME
IPC: G02B6/122 , G02F1/313 , G02F2/00 , H01L27/15 , H01S5/00 , H01S5/026 , H01S5/06 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/40 , H01S5/50 , H04B10/07 , H04B10/275 , H04B10/278 , H04B10/29 , H04B10/40 , H04B10/50 , H04B10/548 , H04B10/572 , H04B10/60 , H04B10/64 , H01L27/14 , H01S3/18
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公开(公告)号：DE69125888T2
公开(公告)日：1997-11-20
申请号：DE69125888
申请日：1991-07-08
Applicant: CANON KK
Inventor： SAKATA HAJIME
Abstract: An optical modulator includes a substrate (10), a first waveguide layer (2) formed on the substrate, a second waveguide layer (1) stacked together with the first waveguide layer in a direction of a thickness thereof on the substrate, the second waveguide layer (1) having a waveguide mode different from that of the first waveguide layer (2), a diffraction grating (3) formed in a region where the waveguide modes of the first and second waveguide layers overlap each other, and an electrode (9). When the electrical signal is applied through the electrode, the wavelength of the light coupled by the diffraction grating is changed, and light output from the second waveguide layer is modulated in accordance with the electrical signal. A method of modulating light using the above optical modulator is also disclosed.
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Patent Agency Ranking
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公开(公告)号：DE68920683D1
公开(公告)日：1995-03-02
申请号：DE68920683
申请日：1989-10-03
Applicant: CANON KK
Inventor： HANDA YUICHI , NOJIRI HIDETOSHI , SAKATA HAJIME
IPC: G02B6/122 , G02B6/12 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/50 , H04B10/213 , H04B10/20 , H01S3/25 , G02B6/28
Abstract: This specification discloses an integrated type optical node (3) comprising a substrate, a channel light waveguide formed on the substrate for connecting the transmission lines (1,2) of an optical information system, an amplifying portion (8) provided on the light waveguide for amplifying a light propagated through the waveguide, and a light branching-off portion provided on the light waveguide for coupling a light transmitter (7) and/or a light receiver (6) to the transmission lines (1,2). The specification also discloses an optical information system using such optical node.
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公开(公告)号：GB2166562B
公开(公告)日：1989-05-24
申请号：GB8524445
申请日：1985-10-03
Applicant: CANON KK
Inventor： SAKATA HAJIME
IPC: G02F1/1333
Abstract: A liquid crystal light modulation device conprises a pair of substrates at least one of which is transparent, a diffraction grating formed between or on at least one of the substrates, a liquid crystal arranged between fine grooves of the diffraction grating, and control means for changing the orientation of the liquid crystal which has been oriented in a predetermined state by the grooves of the diffraction grating.
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公开(公告)号：DE69609547T2
公开(公告)日：2001-04-19
申请号：DE69609547
申请日：1996-03-29
Applicant: CANON KK
Inventor： MIZUTANI NATSUHIKO , SAKATA HAJIME , FURUKAWA YUKIO
IPC: H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/50 , H01S5/06 , H04B10/14
Abstract: An optical semiconductor apparatus includes at least two semiconductor laser portions (11, 12; 21, 22; 31, 32; 41, 42; 51, 52; 61, 62; 71, 72; 81, 82; 2011, 2013) each having a light waveguide with an active layer (35, 45, 105, 503, 513, 605, 703, 714, 803, 1015, 1215, 2105, 2303, 2703, 2714, 2724) and a distributed reflector (33, 43, 102, 505, 515, 603, 705, 716, 806, 1039, 1139, 2102, 2305, 2705), and a stimulating unit (113, 114, 115; 1035, 1037; 2109, 2110; 2308, 2309; 2708, 2709) for independently stimulating the active layers of the light waveguides. The semiconductor laser portions are serially arranged in a light propagation direction. The light waveguides are constructed such that a difference between propagation constants for two different polarization modes in one of the waveguides is different from a difference between propagation constants for the two different polarization modes in the other of the waveguides. When one of injection of a modulation current signal into or application of a mudulation voltage to the optical semiconductor apparatus, an oscillation state can be switched between a state in which Bragg wavelengths for one of the two different polarization modes coincide with each other between the light waveguides and a state in which Bragg wavelengths for the other of the two different polarization modes coincide with each other between the light waveguides.
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公开(公告)号：DE69607493T2
公开(公告)日：2001-04-05
申请号：DE69607493
申请日：1996-01-03
Applicant: CANON KK
Inventor： SAKATA HAJIME
IPC: H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/34 , H01S5/06
Abstract: A semiconductor laser includes a semiconductor laser structure having an active layer (13, 155, 217, 353). The laser structure is designed such that light in both of two polarization modes can be excited therein. First and second reflectors (14, 106; 114, 206; 216; 316) are provided, and at least one of them is a distributed reflector (14, 114, 216, 316) which determines first and second reflection wavelengths for the two polarization modes. A coupling unit (17, 18, 19; 117, 151, 152; 214, 217; 314, 351, 352, 353) is provided for coupling the laser structure and the first and second reflectors for either of the light of the two polarization modes at first and second coupling wavelengths, which respectively coincide with the first and second reflection wavelengths. One of the light of the two polarization modes at the first and second reflection wavelengths is selectively propagated along a cavity comprised of the laser structure and the first and second reflectors by a control unit (104, 110; 204, 210; 304, 305; 404, 405). Thus, light oscillates in one of the two polarization modes at the first and second reflection wavelengths.
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