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公开(公告)号：WO1995029883A1
公开(公告)日：1995-11-09
申请号：PCT/US1995005440
申请日：1995-05-02
Applicant: CARDINAL IG COMPANY
Inventor： CARDINAL IG COMPANY , BOND, Robert , STANEK, Roger, P. , HOFFMAN, Wayne
IPC: C03C17/36
CPC classification number: C03C17/3615 , C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C03C2217/78 , G02B1/105 , G02B1/14 , Y10T428/24975
Abstract: Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 ANGSTROM to 150 ANGSTROM in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
Abstract translation: 包含透明非金属基底和透明膜叠层的透明物品被溅射沉积在基底上。 膜堆的特征在于包括至少一个红外反射金属膜，金属膜上的电介质膜和在所述电介质膜上的厚度为10至150的保护氮化硅膜。 电介质膜理想地具有与氮化硅基本上相同的折射率并且与氮化硅膜邻接。
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公开(公告)号：EP0758306B2
公开(公告)日：2005-03-23
申请号：EP95917793.2
申请日：1995-05-02
Applicant: CARDINAL IG COMPANY
Inventor： BOND, Robert , STANEK, Roger, P. , HOFFMAN, Wayne
CPC classification number: C03C17/3615 , C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C03C2217/78 , G02B1/105 , G02B1/14 , Y10T428/24975
Abstract: Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 Å to 150 Å in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
Abstract translation: 包含透明的非金属基底和透明膜叠层的透明制品被溅射沉积在基底上。 薄膜叠层的特征在于，在所述电介质薄膜上包括至少一个红外反射金属薄膜，金属薄膜上的电介质薄膜以及厚度为10埃至150埃的保护氮化硅薄膜。 电介质膜理想地具有与氮化硅基本相同的折射率并与氮化硅膜邻接。
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公开(公告)号：EP0758306B1
公开(公告)日：1998-08-05
申请号：EP95917793.2
申请日：1995-05-02
Applicant: CARDINAL IG COMPANY
Inventor： BOND, Robert , STANEK, Roger, P. , HOFFMAN, Wayne
CPC classification number: C03C17/3615 , C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C03C2217/78 , G02B1/105 , G02B1/14 , Y10T428/24975
Abstract: Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 Å to 150 Å in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
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公开(公告)号：EP0758306A1
公开(公告)日：1997-02-19
申请号：EP95917793.0
申请日：1995-05-02
Applicant: CARDINAL IG COMPANY
Inventor： BOND, Robert , STANEK, Roger, P. , HOFFMAN, Wayne
CPC classification number: C03C17/3615 , C03C17/36 , C03C17/3618 , C03C17/3626 , C03C17/3639 , C03C17/3642 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C17/3681 , C03C2217/78 , G02B1/105 , G02B1/14 , Y10T428/24975
Abstract: Transparent articles comprising transparent, nonmetallic substrate and a transparent film stack is sputter deposited on the substrate. The film stack is characterized by including at least one infrared reflective metal film, a dielectric film over the metal film, and a protective silicon nitride film of 10 Å to 150 Å in thickness over the said dielectric film. The dielectric film desirably has substantially the same index of refraction as does silicon nitride and is contiguous with the silicon nitride film.
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