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公开(公告)号：JPH02119183A
公开(公告)日：1990-05-07
申请号：JP27089388
申请日：1988-10-28
Applicant: CASIO COMPUTER CO LTD
Inventor： MATSUMOTO HIROSHI , YAMADA HIROYASU , BABA HISAYA , YAMAMURA NOBUYUKI
IPC: H01L27/04 , H01L21/822 , H01L21/8247 , H01L27/115 , H01L27/12 , H01L29/78 , H01L29/786
Abstract: PURPOSE:To provide a memory effect by composing a gate insulating film of a specific SiN film. CONSTITUTION:A metal film is formed on an insulating substrate 1 and patterned to form a gate electrode 2. An SiN film which is to be a gate insulating film 3, an i-type a-Si semiconductor layer 4 and an n -type a-Si contact layer 5 are successively formed on the substrate 1 by a plasma CVD method. A metal film is formed on the contact layer 5 and patterned to form a source electrode 6 and a drain electrode 7 and, at the same time, the part of the layer 5 between the electrodes 6 and 7 is removed by etching. SiH4 and NH3 are used as main component gases for forming the film 3 and the flow rate ratio between SiH4 and NH3 is so selected as to have the Si/N composition ratio of the formed SiN film be 0.85-1.1. The gate insulating film (SiN film) 3 formed like this has a sufficiently large hysteresis, so that a memory effect can be provided.
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公开(公告)号：JPH03200084A
公开(公告)日：1991-09-02
申请号：JP33876789
申请日：1989-12-28
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
Abstract: PURPOSE:To obtain a sensor which can measure a magnetic field in a fine area and of which applicability is large by laminating a lean magnetic semicondudtor and a semiconductor alternately and making one of them a quantum well layer and the other a quantum barrier layer. CONSTITUTION:On a substrate 1 formed with an insulating material of which an elasped change is small such as glass, a multilayer film 2 that a lean magnetic semiconductor layer 2a and a semiconductor layer 2b are laminated alternately is formed. The lean magnetic semiconductor layer 2a becomes a quantum barrier and the semiconductor layer 2b becomes a quantum well. Then, when voltage is impressed on a pair of electrodes 3a and 3b, extensive Zeeman split that the energy level of the lean magnetic semiconductor 2a is split into an upward spin level and a downward spin level by the existence of a magnetic field is generated. Since the downward level after the split changes corresponding to the intensity of the magnetic field, by making the energy order of the respective quantum well layers different repectively, the value of an electric current flowing in the semiconductor layer 2b changes. Accordingly, by detecting the change of a current value, the intensity of the magnetic filed can be obtained.
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公开(公告)号：JPH01173644A
公开(公告)日：1989-07-10
申请号：JP33015187
申请日：1987-12-28
Applicant: CASIO COMPUTER CO LTD
Inventor： NAKAMURA OSAMU , BABA HISAYA
IPC: H01L29/205 , H01L21/338 , H01L29/778 , H01L29/78 , H01L29/80 , H01L29/812
Abstract: PURPOSE:To make an operation at room temperature easy and to reduce power consumption by a method wherein two or more barrier regions at a prescribed interval are formed in a current path between a source electrode and a drain electrode. CONSTITUTION:The following are formed: a source electrode 14 and a drain electrode 15 which have been formed on a substrate 13 at an appropriate interval; a gate electrode 17 used to control an electric current flowing between both electrodes 14, 15; two or more barrier regions 18 which have been formed in a current path between both electrodes 14, 15 at a prescribed interval and which have been formed by using a material whose band gap is larger than that of the substrate 13. When a voltage is impressed between the source electrode 14 and the drain electrode 15, a two-dimensional electron gas (an electron existence region whose thickness is substantially zero) 19 as a current path is formed at an interface between an n-AlGaAs layer 16 and a GaAs layer 12. By this setup, it is possible to operate this device at room temperature easily and to reduce power consumption.
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公开(公告)号：JPH01172923A
公开(公告)日：1989-07-07
申请号：JP33015287
申请日：1987-12-28
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
IPC: G02F1/01
Abstract: PURPOSE:To utilize the title element for an optical shutter and an optical switch, etc. by applying a voltage to an amorphous dielectric multi-layer film which can cut off selectively a light beam of a prescribed frequency area and can allow a light beam of other frequency area to transmit through. CONSTITUTION:As for a multi-layer film 2 formed by laminating alternately amorphous dielectric thin layers 3, 4 whose refractive indexes are different from each other, when a light beam is radiated vertically to the film surface, when the frequency of this light beam is outside of the range of a localized frequency area, the light beam transmits through, but when said frequency is within the range of the localized frequency area, the light beam does not transmit through. However, when an electric field is applied in the direction running along the film surface of the multi-layer film 2, the localized frequency area moves relatively by a variation of the refractive index known as an electro-optical effect, and the light beam of the frequency which is unsable to transmit through the multi-layer film 2 before the electric field is applied can transmit through the multi-layer film 2. That is, by controlling the value of a voltage applied to an electrode, the radiated light beam can be allowed to transmit through or cut off. In such a way, this element can be applied to an optical shutter, etc.
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公开(公告)号：JPH04299539A
公开(公告)日：1992-10-22
申请号：JP8585991
申请日：1991-03-27
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
Abstract: PURPOSE:To obtain a semiconductor element which can control the transmission of light by changing its absorption factor and refractive index even when no electric field is impressed upon the element. CONSTITUTION:This semiconductor element is constituted of low magnetic semiconductors 1 and another material 2 having an energy band gap which is larger than that of the semiconductors 1 so that the semiconductors 1 can be three-dimensionally enclosed in the material 2 in a quantum box structure.
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Patent Agency Ranking
公开(公告)号：JPH01173675A
公开(公告)日：1989-07-10
申请号：JP33014987
申请日：1987-12-28
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
Abstract: PURPOSE:To apply an effect of a phase shift in an electron wave by a method wherein a piece of information is written by impressing a magnetic field on a superconducting ring and the piece of information is read by detecting a change in an electric current value between electrodes due to intensity of this magnetic field. CONSTITUTION:A piece of information is written while a magnetic field is confined to the inside of a superconducting ring by an ongoing current flowing through a superconductor ring 7 on the basis of the Meissner effect of a superconductor 5; on the other hand, the piece of information is read by a change in an electric current between electrodes 3a, 3b due to the Aharonov-Bohm effect and the Meissner effect of the superconductor 5. When a temperature of the superconducting ring 7 is raised to a critical temperature or higher, the trapped magnetic flux is released and the piece of information is erased. By this setup, it is possible to apply an effect of a phase shift in an electron wave inside the superconductor 5.
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公开(公告)号：JPH03203052A
公开(公告)日：1991-09-04
申请号：JP33876389
申请日：1989-12-28
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
IPC: G11B11/10 , G11B11/105
Abstract: PURPOSE:To increase the Kerr rotating angle of reading light and to increase C/N by laminating a magneto-optical recording layer and required multilayered films on a substrate. CONSTITUTION:The magneto-optical memory device is formed by laminating the magneto-optical recording layer 2 and the multilayered films 3 alternately laminated with thin magnetic semiconductor layers 3a and semiconductor layers 3b on the substrate. The magnetic fields depending on the directions of the spins corresponding to the recording of the layer 2 are then added to the layers 3a. The Kerr rotating angle of the reading light 4 is greatly increased in this way and the reading with the increased C/N is executed by the simple reader.
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公开(公告)号：JPH02177197A
公开(公告)日：1990-07-10
申请号：JP33352488
申请日：1988-12-28
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
IPC: G11C11/44
Abstract: PURPOSE:To effectively read out the information written via the Meissner effect by locking a magnetic field into a superconducting ring to write the information and detecting the current change of a quantum well layer formed by the magnetic field to read the information. CONSTITUTION:A prescribed external magnetic field is applied to a superconducting ring 5 kept at a temperature higher than a critical temperature TC. Then the magnetic field is set zero with the ring 5 kept at a temperature lower than the temperature TC. A permanent current flows to the ring 5 by the Meissner effect and the magnetic field is locked into the ring 5. A superlattice layer 3 containing the dilute magnetic semiconductors and the semiconductors laminated alternately is set under the locked magnetic field. Then a current is supplied to the layer 3 and the current flowing to the quantum well layer in the layer 3 is greatly changed in comparison with the absence of the magnetic field. Thus the information stored in the form of the intensity of the magnetic field can be read by detecting the change of the current flowing to the quantum well layer.
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公开(公告)号：JPH01122106A
公开(公告)日：1989-05-15
申请号：JP27931787
申请日：1987-11-06
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA , NAKAMURA OSAMU
Abstract: PURPOSE:To inexpensively and easily manufacture a magnetic thin film element and to obtain preferable characteristics as a thin film inductance element by providing an axis of easy magnetization along a surface substantially parallel to the face of a polycrystalline gadolinium thin film thereon. CONSTITUTION:A magnetic thin film element 1 comprises a substrate 2 and a gadolinium thin film 3. The substrate 2 is formed, for example, of a semiconductor integrated circuit chip or the like covered with an insulator, such as silicon oxide or nitride on its surface or a heat resistant glass plate. The film 3 is polycrystalline, and formed on the substrate 2. The film 3 has lower Curie temperature than that of the single crystalline gadolinium, and has an axis of easy magnetization along the surface parallel to the surface of the film. Thus, it can be inexpensively and easily manufactured, and excellent characteristics as a thin film inductance element are obtained.
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公开(公告)号：JPH05242541A
公开(公告)日：1993-09-21
申请号：JP7554792
申请日：1992-02-26
Applicant: CASIO COMPUTER CO LTD
Inventor： BABA HISAYA
IPC: G01B7/00 , G11B11/10 , G11B11/105
Abstract: PURPOSE:To make a recording density high and C/N large. CONSTITUTION:Separating grooves 4 in a track direction are formed atop a transparent substrate 2 and a perpendicularly magnetized thin-film layer 3 is formed by sputtering and vapor deposition from the upper diagonal. The separating grooves 4 can be formed simultaneously with grooves and preformats. Since the thermal insulating characteristic between adjacent recording pits is improved by the separating grooves, the density is made higher and the C/N is increased.
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