公开(公告)号：WO2004048258A8

公开(公告)日：2005-07-28

申请号：PCT/US0337576

申请日：2003-11-21

Applicant: CDREAM DISPLAY CORP

Inventor： KANG SUNG GU ,  BAE CRAIG

IPC: C30B25/00 ,  C30B29/60 ,  C30B29/66 ,  C30B33/12 ,  C30B29/04 ,  C30B29/06

CPC classification number: C30B25/00 ,  B82Y30/00 ,  C30B29/605 ,  C30B33/12 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-­treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth stop to the post treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

Abstract translation: 使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。 在纳米管已经生长之后，对新形成的纳米管结构进行后处理步骤。 后处理从生长的纳米管的壁上除去石墨和其他碳颗粒，并控制纳米管层的厚度。 在相同基板温度下用等离子体进行后处理。 对于后处理，使用含氢气体作为等离子体源气体。 在从纳米管生长停止转移到后处理步骤期间，等离子体处理室中的压力通过上述净化气体而稳定，而不关闭室中的等离子体。 这样就不需要清洗和排空等离子体处理室。

公开(公告)号：AU2003294445A1

公开(公告)日：2004-06-18

申请号：AU2003294445

申请日：2003-11-21

Applicant: CDREAM DISPLAY CORP

Inventor： KANG SUNG GU ,  BAE CRAIG

IPC: C30B25/10

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step is performed on the newly formed nanotube structures. The purification removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition is used as the plasma source gas. Because the source gas for the purification plasma is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which is sustained in the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

公开(公告)号：WO2004048257A3

公开(公告)日：2004-09-30

申请号：PCT/US0337352

申请日：2003-11-21

Applicant: CDREAM DISPLAY CORP

Inventor： KANG SUNG GU ,  BAE CRAIG

IPC: C30B25/10 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  C30B29/00 ,  C30B29/04

CPC classification number: C30B25/105 ,  B82Y30/00 ,  C30B29/605 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a purification step Is performed on the newly formed nanotube structures. The purification removes graphite -and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The purification is performed with the plasma 'at the same substrate temperature. For the purification, the hydrogen containing gas added as an additive to the source gas for the plasma chemical deposition Is used as the plasma source gas. Because the source gas for the purification plasma Is added as an additive to the source gas for the chemical plasma deposition, the grown carbon nanotubes are purified by reacting with the continuous plasma which Is sustained In the plasma process chamber. This eliminates the need to purge and evacuate the plasma process chamber as well as to stabilize the pressure with the purification plasma source gas. Accordingly, the growth and the purification may be performed without shutting off the plasma in the plasma process chamber.

Abstract translation: 使用等离子体化学沉积工艺在衬底的表面上形成碳纳米管。 纳米管生长后，在新形成的纳米管结构上进行纯化步骤。 纯化从生长的纳米管壁去除石墨和其他碳颗粒并控制纳米管层的厚度。 在相同的基底温度下用等离子体进行纯化。 为了净化，将用作等离子体化学沉积的源气体作为添加剂添加的含氢气体用作等离子体源气体。 因为用于纯化等离子体的源气体作为添加剂添加到用于化学等离子体沉积的源气体中，所生长的碳纳米管通过与在等离子体处理室中维持的连续等离子体反应而被净化。 这消除了清洗和排空等离子体处理室以及使用净化等离子体源气体稳定压力的需要。 因此，可以执行生长和纯化而不关闭等离子体处理室中的等离子体。

公开(公告)号：WO2004048258A2

公开(公告)日：2004-06-10

申请号：PCT/US0337576

申请日：2003-11-21

Applicant: CDREAM DISPLAY CORP

Inventor： KANG SUNG GU ,  BAE CRAIG

IPC: C30B25/00 ,  C30B29/60 ,  C30B29/66 ,  C30B33/12 ,  C01B

CPC classification number: C30B25/00 ,  B82Y30/00 ,  C30B29/605 ,  C30B33/12 ,  Y10S977/843 ,  Y10S977/844 ,  Y10S977/845

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-­treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth stop to the post treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

Abstract translation: 使用等离子体化学沉积工艺在基板的表面上形成碳纳米管。 在纳米管已经生长之后，对新形成的纳米管结构进行后处理步骤。 后处理从生长的纳米管的壁上除去石墨和其他碳颗粒，并控制纳米管层的厚度。 在相同基板温度下用等离子体进行后处理。 对于后处理，使用含氢气体作为等离子体源气体。 在从纳米管生长停止转移到后处理步骤期间，等离子体处理室中的压力通过上述净化气体而稳定，而不关闭室中的等离子体。 这样就不需要清洗和排空等离子体处理室。

公开(公告)号：WO2004064099A2

公开(公告)日：2004-07-29

申请号：PCT/US0326264

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORP

Inventor： KANG SIMON ,  BAE CRAIG ,  KIM JUNG JAO

IPC: H01J1/304 ,  H01J9/02 ,  H01J

CPC classification number: B82Y10/00 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/952

Abstract: A flat panel display and a method for forming a carbon nanotube based flat panel display. In one embodiment, the flat panel display includes a barrier layer formed between a catalyst layer upon which microstructures of carbon nanotubes are formed and a resistor layer. The barrier layer acts as an anti diffusion layer between the catalysts layer and the resistor layer to prevent the catalyst layer from diffusing into the resistor layer during the growing of the carbon nanotubes. The barrier layer also enhances the adhesion characteristics of the catalyst layers to enable the uniform growth of the carbon nanotube structures on the catalyst layer.

Abstract translation: 平板显示器和用于形成碳纳米管基平板显示器的方法。 在一个实施例中，平板显示器包括在碳纳米管的微结构形成于其上的催化剂层与电阻器层之间形成的阻挡层。 阻挡层用作催化剂层和电阻器层之间的抗扩散层，以防止催化剂层在碳纳米管生长期间扩散到电阻器层中。 阻挡层还增强了催化剂层的粘合特性，从而能够在催化剂层上均匀生长碳纳米管结构。

公开(公告)号：WO2004049369A3

公开(公告)日：2004-07-22

申请号：PCT/US0326314

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORP

Inventor： KANG SIMON ,  BAE CRAIG ,  KIM JUNG JAO

IPC: C23C16/02 ,  C23C16/26

CPC classification number: B82Y30/00 ,  C23C16/0281 ,  C23C16/26

Abstract: An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 200 °C to 600 °C compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges.

Abstract translation: 另一方面，电子发射器件包含图案化成位于电子发射元件之间的多个横向分离的部分的垂直发射极，另一方面，衬底。 包含碳纳米管的电子发射元件在与下面的基底的热应力兼容的200℃至600℃的温度范围内生长。 电子发射元件在颗粒化的催化剂层上生长，其在如此低的温度范围内提供用于生长电子发射元件的大的表面积。

公开(公告)号：AU2003303718A8

公开(公告)日：2004-08-10

申请号：AU2003303718

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORP

Inventor： KIM JUNG JAO ,  KANG SIMON ,  BAE CRAIG

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/05

Abstract: An electron-emitting device, for example as used in a field emissive display device, includes a barrier layer between an emitter electrode structure and a catalyst layer, upon which microstructures of carbon nanotubes are formed. The barrier layer may act as an anti diffusion layer between the catalyst layer and, for example, a resistive layer of the emitter electrode structure. In this way, the catalyst layer may be prevented from diffusing into the resistive layer during the growing of the carbon nanotubes or other electron-emissive elements. The barrier layer may also enhance the adhesion characteristics of the catalyst layer to improve the uniformity of growth of the electron-emissive elements with the catalyst layer.

公开(公告)号：AU2003293007A1

公开(公告)日：2004-06-18

申请号：AU2003293007

申请日：2003-11-21

Applicant: CDREAM DISPLAY CORP

Inventor： BAE CRAIG ,  KANG SUNG GU

IPC: C30B25/00 ,  C30B29/60 ,  C30B29/66 ,  C30B33/12

Abstract: Carbon nanotubes are formed on a surface of a substrate using a plasma chemical deposition process. After the nanotubes have been grown, a post-treatment step is performed on the newly formed nanotube structures. The post-treatment removes graphite and other carbon particles from the walls of the grown nanotubes and controls the thickness of the nanotube layer. The post-treatment is performed with the plasma at the same substrate temperature. For the post-treatment, the hydrogen containing gas is used as a plasma source gas. During the transition from the nanotube growth step to the post-treatment step, the pressure in the plasma process chamber is stabilized with the aforementioned purifying gas without shutting off the plasma in the chamber. This eliminates the need to purge and evacuate the plasma process chamber.

公开(公告)号：AU2003303718A1

公开(公告)日：2004-08-10

申请号：AU2003303718

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORP

Inventor： KIM JUNG JAO ,  KANG SIMON ,  BAE CRAIG

IPC: H01J1/304 ,  H01J9/02

Abstract: An electron-emitting device, for example as used in a field emissive display device, includes a barrier layer between an emitter electrode structure and a catalyst layer, upon which microstructures of carbon nanotubes are formed. The barrier layer may act as an anti diffusion layer between the catalyst layer and, for example, a resistive layer of the emitter electrode structure. In this way, the catalyst layer may be prevented from diffusing into the resistive layer during the growing of the carbon nanotubes or other electron-emissive elements. The barrier layer may also enhance the adhesion characteristics of the catalyst layer to improve the uniformity of growth of the electron-emissive elements with the catalyst layer.

公开(公告)号：AU2003302355A8

公开(公告)日：2004-06-18

申请号：AU2003302355

申请日：2003-08-20

Applicant: CDREAM DISPLAY CORP

Inventor： KIM JUNG JAO ,  BAE CRAIG ,  KANG SIMON

IPC: C23C16/02 ,  C23C16/26

Abstract: An electron-emitting device contains a vertical emitter electrode patterned into multiple laterally separated sections situated between the electron-emissive elements, on one hand, and a substrate, on the other hand. The electron-emissive elements comprising carbon nanotubes are grown at a temperature range of 200° C. to 600° C. compatible with the thermal stress of the underlying substrate. The electron-emissive elements are grown on a granulized catalyst layer that provides a large surface area for growing the electron-emissive elements at such low temperature ranges.