Abstract:
A memory 200 including an array 201 of rows and columns of memory cells. Row decoder circuitry 211 is provided for selecting in response to a row address a row in array 201 for access. Column decoder circuitry 205 is provided for selecting at least one location within a first group of columns along the selected row in array 201 in response to a column address. At least one shift register 207 is provided for allowing serial access to one of the cells within a second group of columns along the selected row.
Abstract:
A memory 200 is provided which includes a plurality of bitlines 204, a plurality of wordlines 203, and an array 202 of rows and columns of multi-bit storage locations 201. Each location 201 includes a plurality of cells for storing data presented on an associated bitline 204 in response to a plurality of control signals, at least one of the storage cells of of each storage location 201 receiving a corresponding one of the control signals from an associated wordlines 203.
Abstract:
A single chip frame buffer 302 for use in a display subsystem 300 operable to display images as frames of preselected numbers of pixels, each pixel defined by a preselected number of bits of pixel data. Single chip frame buffer 302 includes an array of memory cells, a number of the memory cells in the array preselected to store pixel data defining a display frame and minimize excess cells. A data port is included having a predetermined number of terminals, the predetermined number of terminals being substantially equal to a number of lines of an associated bus.
Abstract:
A memory device 200 which includes a multiplexed address/data input/output 230. Circuitry 200 is based around an array 201 of memory cells and includes circuitry 202, 204 for addressing at least one of the cells in the array in response to at least one address bit and circuitry 208, 210, 211, 212 for exchanging data with an addressed one of the cells. Memory device 200 also includes control circuitry 206 operable to pass an address bit presented at the multiplexed input/output to the circuitry for addressing during a first time period and allow for the exchange of data between the circuitry for exchanging and the multiplexed input/output during a second time period.
Abstract:
A memory 200 including an array 201 of rows and columns of memory cells. Row decoder circuitry 211 is provided for selecting in response to a row address a row in array 201 for access. Column decoder circuitry 205 is provided for selecting at least one location within a first group of columns along the selected row in array 201 in response to a column address. At least one shift register 207 is provided for allowing serial access to one of the cells within a second group of columns along the selected row.
Abstract:
A memory device 200 which includes a multiplexed address/data input/output 230. Circuitry 200 is based around an array 201 of memory cells and includes circuitry 202, 204 for addressing at least one of the cells in the array in response to at least one address bit and circuitry 208, 210, 211, 212 for exchanging data with an addressed one of the cells. Memory device 200 also includes control circuitry 206 operable to pass an address bit presented at the multiplexed input/output to the circuitry for addressing during a first time period and allow for the exchange of data between the circuitry for exchanging and the multiplexed input/output during a second time period.
Abstract:
A single chip frame buffer 302 for use in a display subsystem 300 operable to display images as frames of preselected numbers of pixels, each pixel defined by a preselected number of bits of pixel data. Single chip frame buffer 302 includes an array of memory cells, a number of the memory cells in the array preselected to store pixel data defining a display frame and minimize excess cells. A data port is included having a predetermined number of terminals, the predetermined number of terminals being substantially equal to a number of lines of an associated bus.
Abstract:
A memory 200 is provided which includes a plurality of bitlines 204, a plurality of wordlines 203, and an array 202 of rows and columns of multi-bit storage locations 201. Each location 201 includes a plurality of cells for storing data presented on an associated bitline 204 in response to a plurality of control signals, at least one of the storage cells of of each storage location 201 receiving a corresponding one of the control signals from an associated wordlines 203.