Abstract:
A microwave device with a secondary yield coefficient of less than 1 is produced by applying a coating of yttrium-iron-garnet to the inner surface of the device by sputtering.
Abstract:
A surface treatment and method for applying the surface treatment to electrical components are provided that include a coating of yttrium-iron-garnet (YIG), which is applied to the inner surface of the component by sputtering.
Abstract:
A surface treatment and method for applying the surface treatment to electrical components are provided that include a coating of yttrium-iron-garnet (YIG), which is applied to the inner surface of the component by sputtering.
Abstract:
A surface treatment and method for applying the surface treatment to electrical components are provided that include a coating of yttrium-iron-garnet (YIG), which is applied to the inner surface of the component by sputtering.